[et_pb_section admin_label=”section”] [et_pb_row admin_label=”row”] [et_pb_column type=”4_4″] [et_pb_text admin_label=”Text”] A time-resolved luminescence spectroscopy system equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors allows measurements in the wavelength range of 0.3 microns to 12 microns. The system is capable of measuring time-resolved photoluminescence and electroluminescence from 10 K to 400 K with nano…

A Fourier Transform Infrared Spectrometer (FTIR) equipped with an InGaAs detector, an InSb detector, and an MCT detector is capable of measuring transmittance and reflectance for a wavelength range of 1 to 15 micron. IR FTIP System setup diagram and summary

The photoluminescence setup was recently equiped with a new CCD array detector for measurements in the 200 nm to 1100 nm wavelength range, as well as an InGaAs array for measurements in the 800 nm to 1700 nm wavelength range.  Four different lasers are currently used in this system: A 6 W 532 nm diode…

The MBE laboratory is equipped with four solid source MBE chambers for growing III-V and II-VI semiconductor materials. All chambers are equipped for reflection high energy electron diffraction (RHEED) characterization and are fully computer controlled. VG V80H (Chamber A and B) The group’s oldest system is a VGV80H twin-chamber MBE system. Chamber A is dedicated…