Facilities

The integrating sphere collects external radiation from an optical source or device (such as a laser or a light emitting diode) usually for the purpose of flux measurement. Radiation introduced into an integrating sphere is dispersed very uniformly at the sphere walls. The resulting integrated radiation level is directly proportional to the initial radiation level and can be directly measured by a detector.

The LeRoy Eyring Center For Solid State Science here at ASU allows materials characterization, including transmission electron microscopy (TEM), scanning electron microscopy (SEM) Secondary Ion Mass Spectrometry (SIMS), Atomic Force Microscopy (AFM), and X-ray measurements.

List of facilities at the LeRoy Eyring Center For Solid State Science

High resolution X…

The Oriel QE/ICPE Kit is a turn key system from Newport for spectral quantum efficiency measurements of solar cells. It includes a 150W xenon arc lamp, Cornerstone 260 1/4m monochromator complete with chopper and filter wheel attached, current preamplifier, Merlin digital lock-in amplifier, calibrated silicon detector head and TracQ Basic software interface for automated spectral QE measurements.

In addition, two 300W xenon arc lamps supplied by Newport provide additional light…

A time-resolved luminescence spectroscopy system equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors allows measurements in the wavelength range of 0.3 microns to 12 microns. The system is capable of measuring time-resolved photoluminescence and electroluminescence from 10 K to 400 K with nano second resolution. This system is designed to be integrated with our low-temperature probe station.

Semiconductor device processing is carried out in a 4,000 square foot class-100 cleanroom in the ASU NanoFab facility.

List of major equipments and systems

Tempress 8-stack furnace tubes configured for: wet and dry thermal oxidation; poly-silicon, low temperature oxide and silicon nitride CVD; phosphorus and boron doping; and the annealing of 4” silicon wafers.Heidelberg DWL 66 Mask Making and Optical Direct-WriteKarl Suss…

General laser diode measurements such as LI, spectrum, temperature dependence, polarization, IV, etc. are done using a specially designed probe station impedance matched for short pulsed testing. Translational stages allow for precise placement of a variety of optical components for quick adaptation allowing a variety of different measurements. Available equipment includes ILX Lightwave LDP-3840 & LDP-3811 Pulsed Current Sources, ILX LDT-5810B Temperature Controller, ILX OMM-6810B…

The MBE laboratory is equipped with four solid source MBE chambers for growing III-V and II-VI semiconductor materials. All chambers are equipped for reflection high energy electron diffraction (RHEED) characterization and are fully computer controlled.

VG V80H (Chamber A and B)

The group’s oldest system is a VGV80H twin-chamber MBE system. Chamber A is dedicated to the growth of II-VI compound semiconductors such as ZnTe, CdTe, and CdSe. Chamber B is dedicated to the growth…

The photoluminescence setup was recently equiped with a new CCD array detector for measurements in the 200 nm to 1100 nm wavelength range, as well as an InGaAs array for measurements in the 800 nm to 1700 nm wavelength range.  Four different lasers are currently used in this system: A 6 W 532 nm diode pumped solid state laser, a 40 mW 532 diode pumped solid state laser, a 120 mW 405 nm laser and a tunable Ti:Sapphire laser. A cryostat enables temperature photoluminescence measurements…

A time-resolved luminescence spectroscopy system equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors allows measurements in the wavelength range of 0.3 microns to 12 microns. The system is capable of measuring time-resolved photoluminescence and electroluminescence from 10 K to 400 K with nano second resolution.

The high-speed lab is equipped with a probe station comprised of high-speed probes and detectors (25 GHz), electrical sources (3 GHz), a sampling oscilloscope, a network analyzer and a light-wave signal analyzer. These allow testing of devices for high speed applications such as optical interconnects, as well as extraction of device operating parameters for better understanding of their performance.