{"id":10532,"date":"2024-11-09T02:39:17","date_gmt":"2024-11-09T09:39:17","guid":{"rendered":"https:\/\/labs.engineering.asu.edu\/mbe-group\/?p=10532"},"modified":"2024-11-10T17:07:27","modified_gmt":"2024-11-11T00:07:27","slug":"publication-highlight","status":"publish","type":"page","link":"https:\/\/labs.engineering.asu.edu\/mbe-group\/publication-highlight\/","title":{"rendered":"Publication Highlight"},"content":{"rendered":"
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AI and MBE Automation<\/h1>\n\n<\/div>\n\n\n
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We demonstrated a closed-loop real-time-control of MBE growth using feed-back from an in-situ spectroscopic ellipsometer (SE) and a large material data base, which enabled precise control of layer thickness and alloy composition within one run without the need of ex situ characterization. The dynamic<\/em> optical constant (OC) database developed for composition control of InGaAs and InAlAs alloys within a large growth temperature range has been accurately parameterized to improve the stability during real-time control. Additionally, we invented several new methods for RHEED with rotating substrates, which significantly enhanced the in-situ real-time characterization capabilities for MBE and other epitaxial growth methods using rotating substrates, which have promoted the progress of MBE automation and provided a tool for AI-controlled thin-film growth.<\/strong><\/p>\n\n\n\n

M. Beaudoin, E. Grassi, S. R. Johnson, K. Ramaswamy, K. Tsakalis, T. L. Alford, Y.-H. Zhang; Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry. J. Vac. Sci. Technol. B 1 May 2000; 18 (3): 1435\u20131438. https:\/\/doi.org\/10.1116\/1.591398<\/p>\n\n\n\n

M Beaudoin, P Kelkar, M.D Boonzaayer, W Braun, P Dowd, S.R Johnson, U Koelle, C.-M Ryu, Y.-H Zhang, Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry, Journal of Crystal Growth, Volumes 201\u2013202, 1999, Pages 990-993, ISSN 0022-0248, https:\/\/doi.org\/10.1016\/S0022-0248(98)01511-5.<\/p>\n\n\n\n

M. Beaudoin, S. R. Johnson, M. D. Boonzaayer, Y.-H. Zhang, B. Johs; Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers. J. Vac. Sci. Technol. B 1 May 1999; 17 (3): 1233\u20131236. https:\/\/doi.org\/10.1116\/1.590728<\/p>\n\n\n\n

W. Braun, H. M\u00f6ller, Y.-H. Zhang; Accurate growth rate determination on rotating substrates using electron diffraction dynamics. Appl. Phys. Lett. 4 January 1999; 74 (1): 138\u2013140. https:\/\/doi.org\/10.1063\/1.122975<\/p>\n\n\n\n

W Braun, H M\u00f6ller, Y.-H Zhang, Phase-locked substrate rotation: new applications for RHEED in MBE growth, Journal of Crystal Growth, Volumes 201\u2013202, 1999, Pages 50-55, ISSN 0022-0248, https:\/\/doi.org\/10.1016\/S0022-0248(98)01277-9.<\/p>\n\n\n\n

W. Braun, H. M\u00f6ller, S. R. Johnson, Y.-H. Zhang; Reflection high-energy electron diffraction oscillations on rotating substrates. J. Vac. Sci. Technol. B 1 March 1999; 17 (2): 474\u2013476. https:\/\/doi.org\/10.1116\/1.590579<\/a><\/p>\n\n\n\n

Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun, Ulrich Koelle, Yong-Hang Zhang, John Roth; In situ temperature control of molecular beam epitaxy growth using band-edge thermometry. J. Vac. Sci. Technol. B 1 May 1998; 16 (3): 1502\u20131506. https:\/\/doi.org\/10.1116\/1.589975<\/a><\/p>\n\n\n\n

S. R. Johnson, E. Grassi, M. Beaudoin, M. D. Boonzaayer, K. S. Tsakalis, Y. H. Zhang; Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InP. J. Vac. Sci. Technol. B 1 May 1999; 17 (3): 1237\u20131240. https:\/\/doi.org\/10.1116\/1.59072<\/a><\/p>\n\n\n\n

C.-H. Kuo, M. Boonzaayer, M. DeHerrera, T. Kyong, Y.-H. Zhang, B. Johs, J. S. Hale; Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer. J. Vac. Sci. Technol. B 1 May 1998; 16 (3): 1484\u20131488. https:\/\/doi.org\/10.1116\/1.589971<\/a><\/p>\n\n\n\n

W. Braun, H. M\u00f6ller, Y.-H. Zhang; Reflection high-energy electron diffraction during substrate rotation: A new dimension for in situ characterization. J. Vac. Sci. Technol. B 1 May 1998; 16 (3): 1507\u20131510. https:\/\/doi.org\/10.1116\/1.589976<\/a><\/p>\n<\/div>\n\n<\/div>\n\n

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Type-II Super Lattice (T2SL) Infrared Materials and Detectors <\/h1>\n\n<\/div>\n\n\n
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Prof. Zhang demonstrated the first InAs\/InAsSb type-II superlattice materials and lasers in the 90\u2019s. The follow-on work at ASU demonstrated long carrier lifetime and first detector using the InAs\/InAsSb T2SL nBn IR detectors. The work inspired a worldwide research and development efforts, which have resulted in novel IR photodetector used in actually applications.<\/strong><\/p>\n\n\n\n

Zhang, Y.-H., \u201cContinuous wave operation of InAs\/InAsx<\/sub>Sb1\u2212x<\/sub> \u200bmidinfrared lasers\u201d, Appl. Phys. Lett. 66<\/strong>, 118-120. (1995)<\/em><\/p>\n\n\n\n

Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Fastenau, J. M., Liu, A. W. K., Elhamri, S., Cellek, O. O., & Zhang, Y.-H., \u201cSignificantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs\/InAsx<\/sub>Sb1-x<\/sub>\u201d, Appl. Phys. Lett. 99<\/strong>, 251110. (2011)<\/em><\/p>\n\n\n\n

Kim, H. S., Cellek, O. O., Lin, Z.-Y., He, Z.-Y., Zhao, X.-H., Liu, S., Li, H., & Zhang, Y.-H., \u201cLong-wave infrared nBn photodetectors based on InAs\/InAsx<\/sub>Sb1-x<\/sub> type-II superlattices\u201d, Appl. Phys. Lett. 101<\/strong>, 161114. (2012).<\/em><\/p>\n\n\n\n

Prins, A. D., Lewis, M. K., Bushell, Z. L., Sweeney, S. J., Liu, S., and Zhang, Y.-H., \u201cEvidence for a defect level above the conduction band edge of InAs\/InAsx<\/sub>Sb1-x<\/sub> type-II superlattices for applications in efficient infrared photodetectors\u201d, Appl. Phys. Lett. 106<\/strong>, 171111. (2015)<\/em><\/p>\n\n\n\n

Tsai, C.-Y., Zhang, Y., Ju, Z., and Zhang, Y.-H., \u201cStudy of vertical hole transport in InAs\/InAsx<\/sub>Sb1-x<\/sub> type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy\u201d, Appl. Phys. Lett. 116<\/strong>, 201108. (2020)<\/em><\/p>\n<\/div>\n\n<\/div>\n\n

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Solar Cells<\/h1>\n\n<\/div>\n\n\n
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We demonstrated monocrystalline CdTe\/MgCdTe double-heterostructure solar cells with a record V<\/em>OC<\/sub> over 1.1 V and efficiency ~20%, and 1.7 eV MgCdTe solar cells for a tandem cell integrated with Si. We also demonstrated ultra-thin (0.3 \u00b5m) GaAs single-junction solar cells integrated with a reflective back scattering layer and developed a water-based epitaxial lift-off (ELO) technique for thin-film CdTe solar cell fabrication. Additionally, we explained the origin of artifacts in EQE measurements of multijunction solar cells and proposed novel methods to correct that.<\/strong><\/p>\n\n\n\n

Jia Ding, Calli M. Campbell, Jacob J. Becker, Cheng-Ying Tsai, Stephen T. Schaefer, Tyler T. McCarthy, Mathieu Boccard, Zachary C. Holman, and Yong-Hang Zhang. Monocrystalline 1.7-eV MgCdTe solar cells. Journal of Applied Physics 131, 023107 (2022).<\/em><\/p>\n\n\n\n

Jia Ding, Cheng-Ying Tsai, Zheng Ju, and Yong-Hang Zhang. Epitaxial lift-off CdTe\/MgCdTe double heterostructures for thin-film and flexible solar cells applications. Applied Physics Letters 118, 181101 (2021).<\/em><\/p>\n\n\n\n

Jacob J. Becker, Mathieu Boccard, Calli M. Campbell, Yuan Zhao, Maxwell Lassise, Zachary C. Holman, and Yong-Hang Zhang. Loss analysis of monocrystalline CdTe solar cells with 20% active-area efficiency. IEEE Journal of Photovoltaics 7, 900\u2013905 (2017).<\/em><\/p>\n\n\n\n

Yuan Zhao, Mathieu Boccard, Shi Liu, Jacob Becker, Xin-Hao Zhao, Calli M. Campbell, Ernesto Suarez, Maxwell B. Lassise, Zachary Holman, and Yong-Hang Zhang. Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%. Nature Energy 1, 16067 (2016).<\/em><\/p>\n\n\n\n

Weiquan Yang, Jacob Becker, Shi Liu, Ying-Shen Kuo, Jing-Jing Li, Barbara Landini, Ken Campman, and Yong-Hang Zhang. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer. Journal of Applied Physics 115, 203105 (2014).<\/em><\/p>\n\n\n\n

Swee Hoe Lim, Jing\u2010Jing Li, Elizabeth H. Steenbergen, and Yong\u2010Hang Zhang. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement. Progress in Photovoltaics: Research and Applications 21, 344\u2013350 (2013).<\/em><\/p>\n<\/div>\n\n<\/div>\n\n

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Hetervalent MBE<\/h1>\n\n<\/div>\n\n\n
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Our group have demonstrated monolithic integration of various heterovalent semiconductors, such as II-VI on III-V, IV-IV on II-VI on III-V, IV-VI on II-VI, and vis versa. These integrations enabled excellent materials quality and device performance, such as record Voc for CdTe solar cells, high quality CdTe(211)-virtual substrates for HgCdTe IR detectors, and \u03b1-Sn(Ge) on CdTe for quantum transport study. Heterovalent DBRs using GaSb\/ZnTe and GaAs\/ZnSe have also demonstrated high reflectivity using fewer layers. <\/strong><\/p>\n\n\n\n

McCarthy, T.T., Ju, Z., Kodama, R., McMinn, A.M., Qi, X., Aqariden, F., Liao, P.-K., Mitra, P., & Zhang, Y.-H., \u201cCdTe(211) virtual substrates grown on InSb(211)B for HgCdTe IR detectors\u201d, Appl. Phys. Lett. (under review)<\/em><\/p>\n\n\n\n

Basnet, R., Upreti, D., McCarthy, T.T., Ju, Z., McMinn, A.M., Sharma, M.M, Zhang, Y.-H., & Hu, J., \u201cMagneto-transport study on Sn-rich Sn1-x<\/sub>Gex<\/sub> thin films enabled by CdTe buffer layer\u201d, J. Vac. Sci. Technol. B 42<\/strong>, 042210. (2024)<\/em><\/p>\n\n\n\n

Zhang, Y.-H., and Smith, D.J. \u201cHeterovalent semiconductor structures and devices grown by molecular beam epitaxy\u201d, J. Vac. Sci. Technol. A 39<\/strong>, 030803. (2021)<\/em><\/p>\n\n\n\n

Ding, J., Tsai, C.-Y., Ju., Z, & Zhang, Y.-H., \u201cEpitaxial lift-off CdTe\/MgCdTe double heterostructures for thin-film and flexible solar cell applications\u201d, Appl. Phys. Lett. 118<\/strong>, 181101. (2021)<\/em><\/p>\n\n\n\n

Lassise, M.B., McCarthy, T.T., Tracy, B.D., McMinn, Smith, D.J., & Zhang, Y.-H., \u201cMolecular beam epitaxial growth and structural properties of hetero-crystalline and heterovalent PbTe\/CdTe\/InSb structures\u201d, J. Appl. Phys. 126<\/strong>, 045708. (2019)<\/em><\/p>\n\n\n\n

Zhao, Y., Boccard, M., Liu, S., Becker, J., Zhao, X.-H., Campbell, C.M., Suarez, E., Lassise, M.B. Holman, Z., & Zhang, Y.-H., \u201cMonocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%\u201d, Nature Energy 1<\/strong>, 16067. (2016)<\/em><\/p>\n\n\n\n

DiNezza, M.J., Zhao, X.-H., Liu, S., Kirk, A.P., & Zhang, Y.-H., \u201cGrowth, steady-state, and time-resolved photoluminescence study of CdTe\/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy\u201d, Appl. Phys. Lett. 103<\/strong>, 193901. (2013)<\/em><\/p>\n<\/div>\n\n<\/div>\n\n\n

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