{"id":10364,"date":"2024-05-23T12:47:23","date_gmt":"2024-05-23T19:47:23","guid":{"rendered":"https:\/\/labs.engineering.asu.edu\/mbe-group\/?page_id=10364"},"modified":"2025-08-05T13:23:07","modified_gmt":"2025-08-05T20:23:07","slug":"publications","status":"publish","type":"page","link":"https:\/\/labs.engineering.asu.edu\/mbe-group\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"<div class=\"uds-hero-sm alignfull has-btn-row \" style=\"margin-bottom:var(--wp--preset--spacing--uds-size-8);\"><div class=\"hero-overlay\"><\/div><img loading=\"lazy\" decoding=\"async\" width=\"2000\" height=\"1125\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573.jpg\" class=\"hero\" alt=\"\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573.jpg 2000w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-300x169.jpg 300w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-1024x576.jpg 1024w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-768x432.jpg 768w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-1536x864.jpg 1536w\" sizes=\"auto, (max-width: 2000px) 100vw, 2000px\" \/><div class=\"acf-innerblocks-container\">\n\n<h1 class=\"wp-block-heading has-white-color has-text-color has-link-color wp-elements-d30f63bcef068bd9fed82507c8f1d947\">Journal Papers<\/h1>\n\n\n\n<div class=\"wp-block-group content is-layout-flow wp-block-group-is-layout-flow\"><\/div>\n\n\n\n<div class=\"wp-block-buttons btn-row is-layout-flex wp-block-buttons-is-layout-flex\"><\/div>\n\n<\/div><\/div>\n\n<div class=\"accordion\" id=\"accordion-69d5bb3e118e5\"><div class=\"acf-innerblocks-container\">\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_7d3bafc79bc23d80a1646e91ab58324d\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_7d3bafc79bc23d80a1646e91ab58324d\" aria-controls=\"fCardBody-block_7d3bafc79bc23d80a1646e91ab58324d\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2025<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_7d3bafc79bc23d80a1646e91ab58324d\" aria-labelledby=\"fCard-block_7d3bafc79bc23d80a1646e91ab58324d\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>180<\/strong> Tyler T. McCarthy,\u00a0Zheng Ju,\u00a0Allison M. McMinn,\u00a0Xin Qi,\u00a0Fikri Aqariden,\u00a0Pok-Kai Liao,\u00a0Pradip Mitra,\u00a0Yong-Hang Zhang; Suppression of indium out-diffusion during molecular beam epitaxy growth of CdTe on InSb substrates.\u00a0<em><em>Appl. Phys. Lett.<\/em><\/em>\u00a012 May 2025; 126 (19): 192103.\u00a0<a href=\"https:\/\/doi.org\/10.1063\/5.0266829\" target=\"_blank\" rel=\"noreferrer noopener\">https:\/\/doi.org\/10.1063\/5.0266829<\/a><\/p>\n\n\n\n<p><strong>179<\/strong> Zheng Ju,\u00a0\u00a0Xin Qi,\u00a0\u00a0Xiaoyang Liu,\u00a0\u00a0Razine Hossain,\u00a0\u00a0Aaron Wang,\u00a0\u00a0Tyler McCarthy,\u00a0\u00a0Allison McMinn,\u00a0\u00a0Yong-Hang Zhang, Monocrystalline CdSeTe\/MgCdTe Double-Heterostructure Solar Cells. Sol. RRL, 9: 2500138.\u00a0<a href=\"https:\/\/doi.org\/10.1002\/solr.202500138\">https:\/\/doi.org\/10.1002\/solr.202500138<\/a><\/p>\n\n\n\n<p><strong>178<\/strong> Xin Qi,\u00a0\u00a0Zheng Ju,\u00a0\u00a0Xiaoyang Liu,\u00a0\u00a0Jiarui Gong,\u00a0\u00a0Yi Lu,\u00a0\u00a0Yang Liu,\u00a0\u00a0Razine Hossain,\u00a0\u00a0Nathan Rosenblatt,\u00a0\u00a0Tyler T. McCarthy,\u00a0\u00a0Allison M. McMinn,\u00a0\u00a0Martha R. McCartney,\u00a0\u00a0David J. Smith,\u00a0\u00a0Zhenqiang Ma,\u00a0\u00a0Yong-Hang Zhang, Interface Fermi-Level Engineering for Selective Hole Extraction Without p-Type Doping In Cdte Solar Cells to Reach High Open Circuit Voltage (>1 V). Sol. RRL, 9: 2500124.\u00a0<a href=\"https:\/\/doi.org\/10.1002\/solr.202500124\">https:\/\/doi.org\/10.1002\/solr.202500124<\/a><\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_730dbdbdcbbb675b7cfac97a4167130e\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_730dbdbdcbbb675b7cfac97a4167130e\" aria-controls=\"fCardBody-block_730dbdbdcbbb675b7cfac97a4167130e\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2024<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_730dbdbdcbbb675b7cfac97a4167130e\" aria-labelledby=\"fCard-block_730dbdbdcbbb675b7cfac97a4167130e\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>177<\/strong> Haris Naeem Abbasi, Xin Qi, Zheng Ju, Zhenqiang Ma, and Yong-Hang Zhang. Atomic layer deposition of ul-trathin nitride films for enhanced carrier lifetimes and photoluminescence in cdte\/mgcdte double heterostructures. Journal of Applied Physics, 136(19):193107, 2024.<\/p>\n\n\n\n<p><strong>176<\/strong> Z. Ju, X. Qi, S. Schaefer, M. R. McCartney, D. J.Smith, A. V. G. Chizmeshya, T. McCarthy, A. McMinn, S. Grover, and Y.-H. Zhang. Cdse with mixed zincblende and wurtzite phases grown on lattice-matched inas sub-strates using molecular beam epitaxy. IEEE Journal of Photovoltaics, 14(5):752\u2013757, 2024.<\/p>\n\n\n\n<p><strong>175<\/strong> Rabindra Basnet,&nbsp;Dinesh Upreti,&nbsp;Tyler T. McCarthy,&nbsp;Zheng Ju,&nbsp;Allison M. McMinn,&nbsp;M. M. Sharma,&nbsp;Yong-Hang Zhang,&nbsp;Jin Hu; Magneto-transport study on Sn-rich Sn<sub>1\u2212x<\/sub>Ge<sub>x<\/sub>&nbsp;thin films enabled by CdTe buffer layer.&nbsp;<em><em>J. Vac. Sci. Technol. B<\/em><\/em>&nbsp;1 2024<\/p>\n\n\n\n<p><strong>174<\/strong> Stephen T. Schaefer,&nbsp;Zheng Ju,&nbsp;Xiaoyang Liu,&nbsp;Xin Qi,&nbsp;Jacob Khurgin,&nbsp;Yong-Hang Zhang; Enhanced second-order nonlinear susceptibility in type-II asymmetric quantum well structures.&nbsp;<em><em>J. Appl. Phys.<\/em><\/em>&nbsp;21 2024<\/p>\n\n\n\n<p><strong>173<\/strong> Tyler T. McCarthy,&nbsp;Allison M. McMinn,&nbsp;Xiaoyang Liu,&nbsp;Razine Hossain,&nbsp;Xin Qi,&nbsp;Zheng Ju,&nbsp;Mark Mangus,&nbsp;Shui-Qing Yu,&nbsp;Yong-Hang Zhang; Molecular beam epitaxy growth and characterization of GePb alloys.&nbsp;<em><em>J. Vac. Sci. Technol. B<\/em><\/em>&nbsp;1 2024<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_aff374775b8786389149f0395a1ea436\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_aff374775b8786389149f0395a1ea436\" aria-controls=\"fCardBody-block_aff374775b8786389149f0395a1ea436\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2023<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_aff374775b8786389149f0395a1ea436\" aria-labelledby=\"fCard-block_aff374775b8786389149f0395a1ea436\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>172<\/strong>&nbsp;Haris Naeem Abbasi, Xin Qi, Jiarui Gong, Zheng Ju, Seunghwan Min, Yong-Hang Zhang, Zhenqiang Ma, Passivation of CdTe\/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition, J. Appl. Phys. 134, 135304 (2023)<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_450d343ed7a499550ed36825b853a1f9\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_450d343ed7a499550ed36825b853a1f9\" aria-controls=\"fCardBody-block_450d343ed7a499550ed36825b853a1f9\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2022<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_450d343ed7a499550ed36825b853a1f9\" aria-labelledby=\"fCard-block_450d343ed7a499550ed36825b853a1f9\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>171<\/strong>&nbsp;Jia Ding, Calli M. Campbell, Jacob J. Becker, Cheng-Ying Tsai, Stephen T. Schaefer, Tyler T. McCarthy, Mathieu Boccard, Zachary C. Holman, and Yong-Hang Zhang, Monocrystalline 1.7-eV MgCdTe solar cells, J. Appl. Phys. 131, 023107 (2022)<\/p>\n\n\n\n<p><strong>170<\/strong>&nbsp;Zhang, F., Castaneda, J.F., Gfroerer, T.H.&nbsp;<em>et al.<\/em>&nbsp;An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures.&nbsp;<em>Light Sci Appl<\/em>&nbsp;<strong>11<\/strong>, 137 (2022). https:\/\/doi.org\/10.1038\/s41377-022-00833-5<\/p>\n\n\n\n<p><strong>169&nbsp;<\/strong>Yiyin Zhou, Solomon Ojo, Chen-Wei Wu, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Guo-En Chang, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, and Shui-Qing Yu, \u201cElectrically injected GeSn lasers with peak wavelength up to 2.7\u2009\u2009\u03bcm,\u201d Photon. Res.&nbsp;<strong>10<\/strong>, 222-229 (2022)<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_b12ec8591e7d91ec9ce87d29cfbabee3\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_b12ec8591e7d91ec9ce87d29cfbabee3\" aria-controls=\"fCardBody-block_b12ec8591e7d91ec9ce87d29cfbabee3\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2021<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_b12ec8591e7d91ec9ce87d29cfbabee3\" aria-labelledby=\"fCard-block_b12ec8591e7d91ec9ce87d29cfbabee3\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>168&nbsp;<\/strong>Tyler T. McCarthy,&nbsp;Zheng Ju,&nbsp;Stephen Schaefer,&nbsp;Shui-Qing Yu,&nbsp;Yong-Hang Zhang; Momentum(<em>k<\/em>)-space carrier separation using SiGeSn alloys for photodetector applications.&nbsp;<em>J. Appl. Phys.<\/em>&nbsp;14 December 2021; 130 (22): 223102.<\/p>\n\n\n\n<p><strong>167<\/strong>&nbsp;T. T. McCarthy, Z. Ju, S. -Q. Yu and Y. -H. Zhang, \u201cMomentum (k)-Space Charge Separation Mid-Wave Infrared Photodetectors Using SiGeSn Alloys,\u201d&nbsp;<em>2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)<\/em>, Cabo San Lucas, Mexico, 2021, pp. 1-2, doi: 10.1109\/SUM48717.2021.9505745.<\/p>\n\n\n\n<p><strong>166&nbsp;<\/strong>Jia Ding, Cheng-Ying Tsai, Zheng Ju, Yong-Hang Zhang, Epitaxial lift-off CdTe\/MgCdTe double heterostructures for thin-film and flexible solar cells applications, Appl. Phys. Lett.&nbsp;<strong>118<\/strong>, 181101 (2021)<\/p>\n\n\n\n<p><strong>165&nbsp;<\/strong>&nbsp;Yong-Hang Zhang, David J. Smith, Heterovalent semiconductor structures and devices grown by molecular beam epitaxy, Journal of Vacuum Science &amp; Technology A&nbsp;<strong>39<\/strong>, 030803 (2021)<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_79a85e3be39e150526bc8a79fbefec62\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_79a85e3be39e150526bc8a79fbefec62\" aria-controls=\"fCardBody-block_79a85e3be39e150526bc8a79fbefec62\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2020<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_79a85e3be39e150526bc8a79fbefec62\" aria-labelledby=\"fCard-block_79a85e3be39e150526bc8a79fbefec62\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>164&nbsp;<\/strong>Cheng-Ying Tsai, Yang Zhang, Zheng Ju, and Yong-Hang Zhang, Study of vertical hole transport in InAs\/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy,&nbsp;Appl. Phys. Lett.&nbsp;<strong>116<\/strong>, 201108 (2020)<\/p>\n\n\n\n<p><strong>163&nbsp;<\/strong>Fan Zhang, Jose F Castaneda, Shangshang Chen, Wuqiang Wu, Michael J DiNezza, Maxwell Lassise, Wanyi Nie, Aditya Mohite, Yucheng Liu, Shengzhong Liu, Daniel Friedman, Henan Liu, Qiong Chen, Yong-Hang Zhang, Jinsong Huang, Yong Zhang, Comparative studies of optoelectrical properties of prominent PV materials: Halide Perovskite, CdTe, and GaAs, Materials Today 2020<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_f26bf3d683d310347a5a3f6688b37c1a\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_f26bf3d683d310347a5a3f6688b37c1a\" aria-controls=\"fCardBody-block_f26bf3d683d310347a5a3f6688b37c1a\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2019<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_f26bf3d683d310347a5a3f6688b37c1a\" aria-labelledby=\"fCard-block_f26bf3d683d310347a5a3f6688b37c1a\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>162&nbsp;<\/strong>Esperanza Luna, Achim Trampert, Jing Lu, Toshihiro Aoki, Yong\u2010Hang Zhang, Martha R McCartney, David J Smith, Strategies for Analyzing Noncommon\u2010Atom Heterovalent Interfaces: The Case of CdTe\u2010on\u2010InSb, Advanced Materials Interfaces(12\/2019)<\/p>\n\n\n\n<p><strong>161<\/strong>&nbsp;H. Tran, T. Pham, J. Margetis, Y. Zhou, W. Dou, P. C. Grant, J. M. Grant, S. Al-Kabi, G. Sun, R. A. Soref, J. Tolle, Y.-H. Zhang, W. Du, B. Li, M. Mortazavi, S.-Q. Yu, Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications, ACS Photonics(10\/2019)<\/p>\n\n\n\n<p><strong>160&nbsp;<\/strong>Maxwell B. Lassise, Tyler T. McCarthy, Brian D. Tracy, David J. Smith and Yong-Hang Zhang, Molecular beam epitaxial growth and structural properties of Heterocrystalline and heterovalent PbTe\/CdTe\/InSb structures, Journal of Applied Physics 126, 045708(2019)<\/p>\n\n\n\n<p><strong>159&nbsp;<\/strong>Calli M. Campbell, Cheng-Ying Tsai, Jia Ding and Yong-Hang Zhang,&nbsp;Epitaxial Lift Off of II-VI Thin Films Using Water-Soluble MgTe,&nbsp;IEEE Journal of Photovoltaics, Page(s): 1-5 (8\/2019)<\/p>\n\n\n\n<p><strong>158&nbsp;<\/strong>Iftikhar Ahmad Niaz, Mohammad Raihan Miah, Lujiang Yan, Yugang Yu, Zhao-Yu He, Yang Zhang, Alex Ce Zhang, Jiayun Zhou, Yong-Hang Zhang, Yu-Hwa Lo,&nbsp;Modeling Gain Mechanisms in Amorphous Silicon due to efficient carrier multiplication and trap induced junction modulation,&nbsp;Journal of Lightwave Technology (7\/11\/2019)<\/p>\n\n\n\n<p><strong>157&nbsp;<\/strong>Yong-Hang. Zhang,&nbsp;Heterovalent Semiconductor Structures and their Device Applications,&nbsp;Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics 2019 (464-481)<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_1cf861bb56689de33bde9e7af4f4ed72\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_1cf861bb56689de33bde9e7af4f4ed72\" aria-controls=\"fCardBody-block_1cf861bb56689de33bde9e7af4f4ed72\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2018<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_1cf861bb56689de33bde9e7af4f4ed72\" aria-labelledby=\"fCard-block_1cf861bb56689de33bde9e7af4f4ed72\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>156&nbsp;<\/strong>Zhao-Yu He, Calli M. Campbell, Maxwell B. Lassise, Zhi-Yuan Lin, Jacob J. Becker, Yong-Hang Zhang,&nbsp;Monolithically Integrated CdTe\/InSb Visible\/Midwave-infrared Two-color Photodetectors,&nbsp;Infrared Physics &amp; Technology, 2018<\/p>\n\n\n\n<p><strong>155&nbsp;<\/strong>M Liao, C Campbell, CY Tsai, YH Zhang, M Goorsky, Strain Analysis of CdTe and InSb Epitaxial Structures Using X-ray-Based Reciprocal Space Measurements and Dynamical Diffraction Simulations,&nbsp;Journal of Electronic Materials, 1-5<\/p>\n\n\n\n<p><strong>154<\/strong>&nbsp;Drew E Swanson, Carey Reich, Ali Abbas, Tushar Shimpi, Hanxiao Liu, Fernando A Ponce, John M Walls, Yong-Hang Zhang, Wyatt K Metzger, WS Sampath, Zachary C Holman, CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cell,&nbsp;Journal of Applied Physics 123 (20), 203101<\/p>\n\n\n\n<p><strong>153&nbsp;<\/strong>X Wang, C Campbell, YH Zhang, RJ Nemanich, Band alignment at the CdTe\/InSb(001) &nbsp;Heterointerface,&nbsp;Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films 36, 031101<\/p>\n\n\n\n<p><strong>152&nbsp;<\/strong>MB Lassise, P Wang, BD Tracy, G Chen, DJ Smith, YH Zhang, Growth of II-VI\/III-V heterovalent quantum structures,&nbsp;Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena<\/p>\n\n\n\n<p><strong>151<\/strong>&nbsp;Jacob J. Becker, Calli M. Campbell, Cheng-Ying Tsai, Yuan Zhao, Maxwell Lassise, Xin-Hao Zhao, Mathieu Boccard, Zachary C. Holman, Yong-Hang Zhang, Monocrystalline 1.7-eV-Bandgap MgCdTe Solar Cell with 11.2% efficiency,&nbsp;IEEE Journal of Photovoltaics, 1-6<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_e8327b98b1d904a6aa5dc85daf434fc6\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_e8327b98b1d904a6aa5dc85daf434fc6\" aria-controls=\"fCardBody-block_e8327b98b1d904a6aa5dc85daf434fc6\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2017<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_e8327b98b1d904a6aa5dc85daf434fc6\" aria-labelledby=\"fCard-block_e8327b98b1d904a6aa5dc85daf434fc6\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>150&nbsp;<\/strong>YH Zhang, Heterovalent II-VI and III-V semiconductor integration: A platform for solar cell and other optoelectronic device applications,&nbsp;Photonics Conference (IPC), 2017 IEEE, 421-421.<\/p>\n\n\n\n<p><strong>149<\/strong>&nbsp;Henan Liu, Yong Zhang, Elizabeth H Steenbergen, Shi Liu, Zhiyuan Lin, Yong-Hang Zhang, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchprohm, Russell D Dupuis, Jin K Kim, Samuel D Hawkins, John F Klem, Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs\/InAs_1-xSb_x,&nbsp;Physical Review Applied 8 (3), 034028<\/p>\n\n\n\n<p><strong>148<\/strong>&nbsp;B.D. Tracy, D.J. Smith, M.B. Lassise, Y.-H. Zhang, Heterovalent ZnTe\/GaSb and ZnSe\/GaAs Grown by Molecular Beam Epitaxy, Microscopy and Microanalysis 23 (S1), 1472-1473<\/p>\n\n\n\n<p><strong>147<\/strong>&nbsp;J.J. Becker, M. Boccard, C.M. Campbell, Y. Zhao, M. Lassise, Z. Holman, Y.-H.Zhang, Loss Analysis of Monocrystalline CdTe Solar Cells With 20% Active-Area Efficiency, IEEE Journal of Photovoltaics, 1-6<\/p>\n\n\n\n<p><strong>146<\/strong>&nbsp;X.-H. Zhao, S. Liu, C.M. Campbell, Y. Zhao, M.B. Lassise, Y.-H. Zhang, Ultralow Interface Recombination Velocity (\u223c1 cm\/s) at CdTe\/Mgx Cd1-xTe Heterointerface, IEEE Journal of Photovoltaics, 1-6<\/p>\n\n\n\n<p><strong>145<\/strong>&nbsp;Y. Zhao, X.-H. Zhao, Y.-H. Zhang, Radiative Recombination Dominated Monocrystalline CdTe\/MgCdTe Double-Heterostructures, IEEE Journal of Photovoltaics 7 (2), 690-694<\/p>\n\n\n\n<p><strong>144<\/strong>&nbsp;D.J. Smith, J. Lu, T. Aoki, M.R. McCartney, Y.-H. Zhang, Observation of compound semiconductors and heterovalent interfaces using aberration-corrected scanning transmission electron microscopy, Journal of Materials Research 32 (5), 921-927<\/p>\n\n\n\n<p><strong>143<\/strong>&nbsp;J.J. Becker, C.M. Campbell, Y. Zhao, M. Boccard, D. Mohanty, M.B. Lassise, E. Suarez, i. Bhat, Z. Holman, Y.-H. Zhang, Monocrystalline CdTe\/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts, IEEE Journal of Photovoltaics 7 (1), 307-312<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_bf9d9a895a4984cb06e3c10209787633\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_bf9d9a895a4984cb06e3c10209787633\" aria-controls=\"fCardBody-block_bf9d9a895a4984cb06e3c10209787633\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2016<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_bf9d9a895a4984cb06e3c10209787633\" aria-labelledby=\"fCard-block_bf9d9a895a4984cb06e3c10209787633\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>142<\/strong>&nbsp;Z.-Y. He, C.M. Campbell, M.B. Lassise, Z.-Y Lin, J.J. Becker, Y. Zhao, M. Boccard, Z. Holman, Y.-H Zhang, CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates, Appl. Phys. Letters 109, 121112 (2016)<\/p>\n\n\n\n<p><strong>141<\/strong>&nbsp;Y. Zhao, M. Boccard, S. Liu, J. Becker, X.-H. Zhao, C. M. Campbell, E. Suarez, M. B. Lassise, Z. Holman, and Y.-H. Zhang, Monocrystalline CdTe Solar Cells with Open-Circuit Voltage Over 1V and Efficiency of 17%, Nature Energy (2016).<\/p>\n\n\n\n<p><strong>140<\/strong>&nbsp;J. Lu, M. J. DiNezza, X.-H. Zhao, S. Liu, Y.-H. Zhang, A. Kovacs, R. E. Dunin-Borkowski, and D. J. Smith, Towards Defect-Free Epitaxial CdTe and MgCdTe Layers Grown on InSb (001) Substrates, Journal of Crystal Growth (2016).<\/p>\n\n\n\n<p><strong>139<\/strong>&nbsp;J. Lu, E. Luna, T. Aoki, E. H. Steenbergen, Y.-H. Zhang, and D. J. Smith, Evalutation of Antimony Segregation in InAs\/InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy, J. of Appl. Phys. 119, 095702 (2016).<\/p>\n\n\n\n<p><strong>138<\/strong>&nbsp;X.-H. Zhao, S. Liu, Y. Zhao, C. M. Campbell, M. B. Lassise, Y.-S. Kuo, and Y.-H. Zhang, Electrical and Optical Properties of n-Type Indium-Doped CdTe\/MgCdTe Double Heterostructures, IEEE Journal of Photovoltaics (2016).<\/p>\n\n\n\n<p><strong>137<\/strong>&nbsp;H. Fu, Z. Lu, X.-H, Zhao, Y.-H. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, Study of Low Efficiency Droop in Semipolar (20-2-1) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence, Journal of Display Technology (2016).<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_b041b50d677384b60f152cd5de1935e5\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_b041b50d677384b60f152cd5de1935e5\" aria-controls=\"fCardBody-block_b041b50d677384b60f152cd5de1935e5\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2015<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_b041b50d677384b60f152cd5de1935e5\" aria-labelledby=\"fCard-block_b041b50d677384b60f152cd5de1935e5\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>136<\/strong>&nbsp;P. T. Webster, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, Y.-H. Zhang, and S, R, Johnson, Measurement of InAsSb Bandgap Energy and InAs\/InAsSb Band Edge Positions Using Spectroscopic Ellipsometry and Photoluminescence Spectroscopy, J. Appl. Phys. 118, 245706 (2015).<\/p>\n\n\n\n<p><strong>135<\/strong>&nbsp;Z. Gan, M. DiNezza, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination, Microscopy and Microanalysis (2015).<\/p>\n\n\n\n<p><strong>134<\/strong>&nbsp;Z.-Y. Lin, S. Liu, E. H. Steenbergen, Y.-H. Zhang, Influence of Carrier Localization on Minority Carrier Lifetime in InAs\/InAsSb Type-II Superlattices, Appl. Phys. Letters 107, 201107 (2015).<\/p>\n\n\n\n<p><strong>133<\/strong>&nbsp;X.-M. Shen, Z.-Y, He, S. Liu, Y.-H. Zhang, D. J. Smith, M. McCartney, Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography, Bulletin of the American Physical Society (2015).<\/p>\n\n\n\n<p><strong>132<\/strong>&nbsp;E. Suarez, X.-H. Zhao, Y. Zhao, C. M. Campbell, M. B. Lassise, P. Webster. S. Liu, Y.-S. Kuo, and Y.-H. Zhang, ZnTe:P\/CdTe Superlattice Window for CdTe Solar Cell on InSb Substrates, Bulletin of the American Physical Society (2015).<\/p>\n\n\n\n<p><strong>131<\/strong>&nbsp;X. Wang, C. M. Campbell, Y.-H. Zhang, and R. Nemanich, Band Alignment of Hydrogen-Plasma Cleaned MBE CdTe on InSb (001), Bulletin of the American Physical Society (2015).<\/p>\n\n\n\n<p><strong>130<\/strong>&nbsp;X.-M. Shen, Z.-Y. He, S. Liu, Z.-Y. Lin, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, An Indirect Method of Studying Band Alignments in nBn Photodetectors Usig Off-Axis Electron Holography, Appl. Phys. Letters 107, 122109 (2015).<\/p>\n\n\n\n<p><strong>129<\/strong>&nbsp;S. Liu, X.-H. Zhao, C. M. Campbell, M. B. Lassise, Y. Zhao, and Y.-H. Zhang, Carrier Lifetimes and Interface Recombination Velocities in CdTe\/MgCd1-xTe Double Heterostructures with Different Mg Compositions Grown by Molecular Beam Epitaxy, Appl. Phys. Letters 107, 041120 (2015).<\/p>\n\n\n\n<p><strong>128<\/strong>&nbsp;J. Suh, K. M. Yu, D. Fu, X. Liu, F. Yang, J. Fan, D. J. Smith, Y.-H. Zhang, J. K. Furdyna, C. Dames, W. Walukiewicz, and J. Wu, Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects, Adv. Materials (2015).<\/p>\n\n\n\n<p><strong>127<\/strong>&nbsp;S. Liu, W. Yang, J. Becker, Y.-S. Kuo, Y.-H. Zhang, Non-Lambertian Reflective Back Scattering and Its Impact on Device Performance of Ultrathin GaAs Single-Junction Solar Cells, IEEE J. of Photovoltaics (2015).<\/p>\n\n\n\n<p><strong>126<\/strong>&nbsp;S. Seyedmohammadi, M. J. Dinezza, S. Liu, P. King, E. G. LeBlanc, X.-H. Zhao, C. M. Campbell, T. H. Meyers, Y.-H. Zhang, and R. J. Malik, Molecular Beam Epitaxial re-growth of CdTe, CdTe\/CdZnTe double heterostructures on CdTe\/InSb (100) substrates with As cap, J. of Crys. Growth (2015).<\/p>\n\n\n\n<p><strong>125<\/strong>&nbsp;D. Zuo, R. Liu, D. Wasserman, J. Mabon, Z.-Y. He, S. Liu, Y.-H. Zhang, E. A. Kadlec, B. V. Olson, and E. A. Shaner, Direct minority carrier transport characterization of InAs\/InAsSb superlattice nBn photodetectors, Appl. Phys. Letters 106, 071107 (2015).<\/p>\n\n\n\n<p><strong>124<\/strong>&nbsp;J. Lu, P. T. Webster, S. Liu, Y.-H. Zhang, S. R. Johnson, and D. J. Smith, Investigation of MBE-grown InAs 1-x Bi x Alloys and Bi-mediated Type-II Superlattices by Transmission Electron Microscopy, J. of Crys. Growth (2015).<\/p>\n\n\n\n<p><strong>123<\/strong>&nbsp;P. T. Webster, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, Y.-H. Zhang, and S. R. Johnson, Absorption properties of type-II InAs\/InAsSb superlattices measured by spectroscopic ellipsometry, Appl. Phys. Letters 106, 061907 (2015).<\/p>\n\n\n\n<p><strong>122<\/strong>&nbsp;S. Liu, X.-H. Zhao, C. M. Campbell, M. J. DiNezza, Y. Zhao, Y.-H. Zhang, Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy, J. Vac. Sci. Technol. B 33, 011207 (2015).<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_7f4559f3f0cf764199893f76943511a9\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_7f4559f3f0cf764199893f76943511a9\" aria-controls=\"fCardBody-block_7f4559f3f0cf764199893f76943511a9\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2014<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_7f4559f3f0cf764199893f76943511a9\" aria-labelledby=\"fCard-block_7f4559f3f0cf764199893f76943511a9\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<p><strong>121<\/strong>&nbsp;X.-H. Zhao, M. J. DiNezza, S. Liu, C. M. Campbell, Y. Zhao, and Y.-H. Zhang, Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe\/MgCdTe double heterostructures grown by molecular beam epitaxy, Appl. Phys. Letters 105, 252101 (2014).<\/p>\n\n\n\n<p><strong>120<\/strong>&nbsp;B. Fluegel, K. Alberi, M. J. DiNezza, S. Liu, Y.-H. Zhang, and A. Mascarenhas, Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as Seen via Microphotoluminescence, Phys. Review Appl. 2, 034010 (2014).<\/p>\n\n\n\n<p><strong>119<\/strong>&nbsp;Xin-Hao Zhao, Michael J. DiNezza, Shi Liu, Su Lin, Yuan Zhao, and Yong-Hang Zhang, Time-resolved and excitation-dependent photoluminescence study of CdTe\/MgCdTe double heterostructures grown by molecular beam epitaxy, Journal of Vacuum Science &amp; Technology B 32, 040601 (2014).<\/p>\n\n\n\n<p><strong>118<\/strong>&nbsp;K. Alberi, B. Fluegel, M. J. DiNezza, S. Liu, Y.-H. Zhang, and A. Mascarenhas, Probing carrier lifetimes at dislocations in epitaxial CdTe, Appl. Phys. Express 7, 065503 (2014).<\/p>\n\n\n\n<p><strong>117<\/strong>&nbsp;P. T. Webster, N. A. Riordan, C. Gogineni, S. Liu, J. Lu, X.-H. Zhao, D. J. Smith, Y.-H. Zhang, and S. R. Johnson, Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs\/InAsSb superlattices, J. Vac. Sci. Technol. B 32, 02C120 (2014).<\/p>\n\n\n\n<p><strong>116<\/strong>&nbsp;W. Yang, J. Becker, Y.-S. Kuo, J.-J. Li, S. Liu, B. Landini, K. Campman, and Y.-H. Zhang, Ultra-Thin GaAs Single-Junction Solar Cells Integrated with a Reflective Back Scattering Layer, J. Appl. Phys. 115, 203105 (2014).<\/p>\n\n<\/div><\/div><\/div>\n\n<div class=\"accordion-item desktop-disable-never\"><div class=\"accordion-header\"><h4><button id=\"fCard-block_3cf1ce42f0d02f24b520754afd1a1db2\" role=\"button\" data-bs-toggle=\"collapse\" data-bs-target=\"#fCardBody-block_3cf1ce42f0d02f24b520754afd1a1db2\" aria-controls=\"fCardBody-block_3cf1ce42f0d02f24b520754afd1a1db2\" aria-expanded=\"false\" class=\"collapsed\"><span class=\"accordion-icon\"><i class=\"fa-placeholder\"><\/i>2013 and prior<\/span><span class=\"fas fa-chevron-up\"><\/span><\/button><\/h4><\/div><div id=\"fCardBody-block_3cf1ce42f0d02f24b520754afd1a1db2\" aria-labelledby=\"fCard-block_3cf1ce42f0d02f24b520754afd1a1db2\" data-bs-parent=\"#accordion-69d5bb3e118e5\" class=\"accordion-body collapse\"><div class=\"acf-innerblocks-container\">\n\n<h3 class=\"wp-block-heading\">2013<\/h3>\n\n\n\n<p>115 Smith, D.J., Aoki, T., Furdyna, J.K., Liu, X., McCartney, M.R., and Zhang, Y.-H., \u201cAtomic-scale characterization of (mostly zincblende) compound semiconductor heterostructures\u201d, J. Phys: Conf. Ser. 471, 012005 (2013).<\/p>\n\n\n\n<p>114 M. J. DiNezza, X.-H. Zhao, S. Liu, A. P. Kirk and Y.-H. Zhang, \u201cGrowth, steady-state and time-resolved photoluminescence study of CdTe\/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy,\u201d Applied Physics Letters 103, 193901 (2013).<\/p>\n\n\n\n<p>113 K. Mahalingam, E. H. Steenbergen, G. J. Brown, Y.-H. Zhang, Quantitative analysis of strain distribution in InAs\/InAs1\u2212xSbx superlattices, Appl. Phys. Lett. 103, 061908 (2013).<\/p>\n\n\n\n<p>112 X.-M. Shen, H. Li, S. Liu, D. J. Smith, Y.-H. Zhang, Study of InAs\/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy, J. of Cryst. Growth 381, 1-5 (2013).<\/p>\n\n\n\n<p>111 J.-J. Li, C. R. Allen, S. H. Lim, and Y.-H. Zhang, Elimination of artifacts in external quantum efficiency measurements of multijunction solar cells using a pulsed voltage bias, IEEE J. of Photovoltaics 3, 769 \u2013 775 (2013).<\/p>\n\n\n\n<p>110 J. Fan, X. Liu, L. Ouyang, R. E. Pimpinella, M. Dobrowolska, J. K. Furdyna, D. J. Smith, and Y.-H. Zhang, Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe\/GaSb distributed Bragg reflectors, J. Vac. Sci. Technol. B 31, 03C109 (2013).<\/p>\n\n\n\n<p>109 J. Fan, L. Ouyang, X. Liu, J. K. Furdyna, D. J. Smith, and Y.-H. Zhang, GaSb\/ZnTe double-heterostructures grown using molecular beam epitaxy Journal of Crystal Growth, J. of Crystal Growth 371 (1), 122\u2013125 (2013).<\/p>\n\n\n\n<p>108 S. Liu, H. Li, O. O. Cellek, D. Ding, X.-M. Shen, E. H. Steenbergen, Z.-Y. Lin, J. Fan, Z.-Y. He, J. Lu, S. R. Johnson, D. J. Smith, and Y.-H. Zhang, Impact of substrate temperature on the structural and optical properties of strain-balanced InAs\/InAsSb type-II superlattices grown by molecular beam epitaxy, Appl. Phys. Lett. 102, 071903-071903-4 (2013).<\/p>\n\n\n\n<p>107 N. Hossain, K. Hild, S.R. Jin, S.-Q. Yu, S.R. Johnson, D. Ding, Y.-H. Zhang, S.J. Sweeney, the influence of growth conditions on carrier recombination mechanisms in 1.3 \u03bcm GaAsSb\/GaAs quantum well lasers, Appl. Phys. Lett. 102, 041106-041106-4 (2013).<\/p>\n\n\n\n<p>106 H. Li, S. Liu, O. O. Cellek, D. Ding, X.-M. Shen, E. H. Steenbergen, J. Fan, Z. Lin, Z.-Y. He, Q. Zhang, P. T. Webster, S. R. Johnson, L. Ouyang, D.J. Smith, and Y.-H. Zhang, A calibration method for group V fluxes and impact of V\/III flux ratio on the growth of InAs\/InAsSb type-II superlattices by molecular beam epitaxy, J. of Crystal Growth 378, 145-149 (2013).<\/p>\n\n\n\n<p>105 J.-J. Li and Y.-H. Zhang, Elimination of Artifacts in External Quantum Efficiency Measurements for Multijunction Solar Cells Using a Pulsed Light Bias, IEEE J. of Photovoltaics 3, 364-369 (2013).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2012<\/h3>\n\n\n\n<p>104 H.S. Kim, O.O. Cellek, Z. Lin, Z.-Y. He, H. Li, S. Liu, and Y.-H. Zhang. Long-wave infrared nBn photodetectors based on InAs\/InAsSb type-II superlattices, Applied Physics Letters 101, 161114 (2012).<\/p>\n\n\n\n<p>103 J. Fan, X. Liu, J. K. Furdyna, Y.-H. Zhang, ZnTe\/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications, Applied Physics Letters 101 (12), 121909 (2012).<\/p>\n\n\n\n<p>102 J.-J. Li, L. Yin, S. R Johnson, B.J. Skromme, S. Wang, X. Liu, D. Ding, C.-Z. Ning, J. K. Furdyna, Y.-H. Zhang, Photoluminescence studies of type-II CdSe\/CdTe superlattices, Applied Physics Letters 101, 061915-061915. (2012)<\/p>\n\n\n\n<p>101 G. Blume, K. Hild, I.P. Marko, T.J.C. Hosea, S.-Q. Yu, S.A. Chaparro, N. Samal, S.R. Johnson, Y.-H. Zhang, S.J. Sweeney, Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements, Journal of Applied Physics 112, 033108-033108. (2012)<\/p>\n\n\n\n<p>100 O.O. Cellek, J.L. Reno, Y.-H. Zhang, Optically addressed near and long-wave infrared multiband photodetectors, Applied Physics Letters 100, 241103-241103. (2012)<\/p>\n\n\n\n<p>99 J.-J. Li, X. Liu, S. Liu, S. Wang, D. J. Smith, D. Ding, S.R. Johnson, J. K. Furdyna and Y.-H. Zhang, CdSe\/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy, Appl. Phys. Lett. 100, 121908 (2012).<\/p>\n\n\n\n<p>98 N. A. Riordan, C. Gogineni, S. R. Johnson, X. Lu, T. Tiedje, D. Ding, Y.-H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, S. W. Koch, Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs, Journal of Materials Science: Materials in Electronics, DOI: 10.1007\/s10854-012-0665-1. (2012)<\/p>\n\n\n\n<p>97 X. Liu, D. J. Smith, H. Cao, Y. P. Chen, J. Fan, Y.-H. Zhang, R. E. Pimpinella, M. Dobrowolska, and J. K. Furdyna, Characterizations of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (100) GaAs substrates, J. Vac. Sci. Technol. B 30, 02B103 (2012);<\/p>\n\n\n\n<p>96 M. J. DiNezza, Q. Zhang, D. Ding, J. Fan, X. Liu, J. K. Furdyna, Y.-H. Zhang, Aluminum diffusion in ZnTe films grown on GaSb substrates for n-type doping, physica status solidi (c), 9, 1720\u20131723 (2012).<\/p>\n\n\n\n<p>95 Q. Zhang, X. Liu, M. J. DiNezza, J. Fan, D. Ding, J. K. Furdyna, Y.-H. Zhang, Influence of Te\/Zn flux ratio on Aluminum doped ZnTe grown by MBE on GaSb substrates, physica status solidi (c), 9, 1724\u20131727 (2012).<\/p>\n\n\n\n<p>94 E. H. Steenbergen, K. Nunna, L. Ouyang, B. Ullrich, D. L. Huffaker, Y.-H. Zhang, Strain-balanced InAs\/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates, J. Vac. Sci. Technol. B 30, 02B107 (2012);<\/p>\n\n\n\n<p>93 L. Ouyang, E. H. Steenbergen, Y.-H. Zhang, K. Nunna, D. L. Huffaker, and D. J. Smith, Structural properties of InAs\/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy, J. Vac. Sci. Technol. B 30, 02B106 (2012);<\/p>\n\n\n\n<p>92 J. Fan, L. Ouyang, X. Liu, D. Ding, J. K. Furdyna, D. J. Smith, and Y.-H. Zhang, Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy, J. Vac. Sci. Technol. B, 30, 02B122 (2012).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2011<\/h3>\n\n\n\n<p><strong>91<\/strong>&nbsp;D. Ding, S. R. Johnson, S.-Q. Yu, S.-N. Wu, and Y.-H. Zhang, A Semi-Analytical Model for Semiconductor Solar Cells, J. Appl. Phys. 110, 123104 (2011).<\/p>\n\n\n\n<p><strong>90<\/strong>&nbsp;E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, and Y.-H. Zhang, Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs\/InAsSb, Appl. Phys. Lett. 99, 251110 (2011).<\/p>\n\n\n\n<p><strong>89<\/strong>&nbsp;J.-J. Li, S. H. Lim, C. R. Allen, D. Ding and Y.-H. Zhang, Combined effects of shunt and luminescence coupling on external quantum efficiency measurements of multi-junction solar cells, IEEE J. of Photovoltaics 1, 225-230 (2011).<\/p>\n\n\n\n<p><strong>88<\/strong>&nbsp;X. Liu, D. J. Smith, J. Fan, Y.-H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, and J. K. Furdyna, Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(100) substrates, Appl. Phys. Lett. 99, 171903 (2011).<\/p>\n\n\n\n<p><strong>87<\/strong>&nbsp;E. H. Steenbergen, Y. Huang, J.-H. Ryou, L. Ouyang, J.-J. Li, D. J. Smith, R. D. Dupuis, Y.-H. Zhang, Structural and optical characterization of type-II InAs\/InAs1-xSbx superlattices grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 99, 071111 \u2013 071114 (2011).<\/p>\n\n\n\n<p><strong>86<\/strong>&nbsp;K. Hild, I.P. Marko, S. J. Sweeney, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang, Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3\u00b5m GaAsSb\/GaAs Vertical Cavity Surface Emitting Lasers, Appl. Phys. Lett. 99, 071110 \u2013 0711102 (2011).<\/p>\n\n\n\n<p><strong>85<\/strong>&nbsp;S. H. Lim, J.-J. Li, E. H. Steenbergen, Y.-H. Zhang, Luminescence coupling effects on multi-junction solar cell external quantum efficiency measurement, Progress in Photovoltaics: Research and Applications, published online: 30 NOV 2011 | DOI: 10.1002\/pip.1215 (2011).<\/p>\n\n\n\n<p><strong>84<\/strong>&nbsp;L. Ouyang, J. Fan, S. Wang, X. Lu, Y.-H. Zhang, X. Liu, J. K. Furdyna, and D. J. Smith, Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (100) substrates, J. of Cryst. Growth 330, 30\u201334 (2011).<\/p>\n\n\n\n<p><strong>83<\/strong>&nbsp;R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, Y.-H. Zhang, Effects of Ar vs. O2 Ambient on Pulsed-Laser-Deposited Ga-doped ZnO, J. of Cryst. Growth 324, 110-114 (2011).<\/p>\n\n\n\n<p><strong>82<\/strong>&nbsp;S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang, Ultra High Luminescence Extraction via the Monolithic Integration of a Light Emitting Active Region with a Semiconductor Hemisphere, J. Vac. Sci. Technol. B29, 031213- 031219 (2011).<\/p>\n\n\n\n<p><strong>81<\/strong>&nbsp;E. H. Steenbergen, M. J. DiNezza, W. H. G. Dettlaff, S. H. Lim, Y.-H. Zhang, Effects of varying light bias on an optically-addressed two-terminal multi-color photodetector, Infrared Physics and Technology 54, 292-295 (2011).<\/p>\n\n\n\n<p><strong>80<\/strong>&nbsp;Y. Huang, J.-H. Ryou, R. D. Dupuis, V. R. D\u2019Costa, E. H. Steenbergen, J. Fan, Y.-H. Zhang, A. Petschke, M. Mandl, S.-L. Chuang, Epitaxial growth and characterization of InAs\/GaSb and InAs\/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors, J. of Cryst. Growth 314, 92-96 (2011).<\/p>\n\n\n\n<p><strong>79<\/strong>&nbsp;R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, D .J. Smith, D. Ding, X. Lu, Y.-H. Zhang, Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition, J. Electron. Mater. 40, 419-428 (2011).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2010<\/h3>\n\n\n\n<p><strong>78<\/strong>&nbsp;J. Fan, L. Ouyang, X. Liu, D. Ding, J.K. Furdyna, D. J. Smith and Y.-H. Zhang, Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0&nbsp;0&nbsp;1) substrates for electronic and optoelectronic device applications, J. of Cryst. Growth 323, 127-131 (2010).<\/p>\n\n\n\n<p><strong>77<\/strong>&nbsp;E. H. Steenbergen, M. J. DiNezza, W. H. G. Dettlaff, S. H. Lim, Y.-H. Zhang, Optically-addressed two-terminal multi-color photodetector, Appl. Phys. Lett. 97 161111-161114 (2010).<\/p>\n\n\n\n<p><strong>76<\/strong>&nbsp;S.-N. Wu, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Four-junction solar cells using monolithically integrated II-VI and III-V semiconductors, Progress in Photovoltaics: Research and Applications 18, 328\u2013333 (2010).<\/p>\n\n\n\n<p><strong>75<\/strong>&nbsp;R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, Y.-H. Zhang, Highly conductive ZnO grown by pulsed laser deposition in pure Ar, Appl. Phys. Lett. 97 072113-072116 (2010).<\/p>\n\n\n\n<p><strong>74<\/strong>&nbsp;C. Yu, K. O\u2019Brien, Y.-H. Zhang, H. Yu, and H. Jiang, Tunable Optical Gratings Based on Buckled Nano-Scale Thin Films on Transparent Elastomeric Substrates, Appl. Phys. Lett. 96, 041111-041114 (2010).<\/p>\n\n\n\n<p><strong>73<\/strong>&nbsp;S. Chung, S. R. Johnson, D. Ding, Y.-H. Zhang, D. J. Smith, M. R. McCartney, Quantitative Dopant Profiling of p-n Junction in InGaAs\/AlGaAs Light-Emitting Diode using Off-Axis Electron Holography, J. Vac. Sci. Technol. B 28, C1D11-14 (2010).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2009<\/h3>\n\n\n\n<p><strong>72<\/strong>&nbsp;S. Chung, S. R. Johnson, D. Ding, Y.-H. Zhang, D. J. Smith, M. R. McCartney, Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs\/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography, IEEE Transactions on Electron Devices 56, 1919-1923 (2009).<\/p>\n\n\n\n<p><strong>71<\/strong>&nbsp;X. Zhang, S. Wang, D. Ding, X. Liu, J.-H. Tan, J. K. Furdyna, Y.-H. Zhang, and D. J. Smith, Structural characterization of integrated II-VI and III-V heterostructures for solar cell applications, J. of Electronic Materials, 8, 1558 (2009).<\/p>\n\n\n\n<p><strong>70<\/strong>&nbsp;S. Wang, D. Ding, X. Liu, X.-B. Zhang, D. J. Smith, J. K. Furdyna, and Y.-H. Zhang, MBE growth of II\/VI materials on GaSb substrates for photovoltaic applications, J. of Cryst. Growth 311, 2116-2119 (2009).<\/p>\n\n\n\n<p><strong>69<\/strong>&nbsp;S. Chung, S. R. Johnson, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, Off-axis electron holographic potential mapping across AlGaAs\/AlAs\/GaAs heterostructures, J. Appl. Phys. 105, 014910 (2009).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2008<\/h3>\n\n\n\n<p><strong>68<\/strong>&nbsp;S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. B\u00fcckers, A. Thr\u00e4nhardt, S. W. Koch, W. R\u00fchle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, Ga(AsSb)\/GaAs\/(AlGa)As heterostructures: additional hole-confinement due to quantum islands, physica status solidi (c) 6, 411-414 (2008).<\/p>\n\n\n\n<p><strong>67<\/strong>&nbsp;S.-Q. Yu, Y. Cao, S. R. Johnson, Y.-H. Zhang, Y.-Z. Huang, GaSb Based Midinfrared Equilateral-Triangle-Resonator Semiconductor Lasers, J. Vac. Sci. Technol. B26, 56-61 (2008).<\/p>\n\n\n\n<p><strong>66<\/strong>&nbsp;T. Tawara, H. Kamada, Y.-H. Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, and T. Sogawa, Quality factor control and lasing characteristics of InAs\/InGaAs quantum dots embedded in photonic-crystal nanocavities, Optical Express 16, 5199 (2008)<\/p>\n\n\n\n<p><strong>65<\/strong>&nbsp;S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. B\u00fcckers, A. Thr\u00e4nhardt, S. W. Koch, W. R\u00fchle, S. R. Johnson, J.-B. Wang, and Y.-H. Zhang, Hole confinement in quantum islands in Ga(AsSb)\/GaAs\/(AlGa)As heterostructures, Appl. Phys. Lett. 92, 161101-161103 (2008).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2007<\/h3>\n\n\n\n<p><strong>64<\/strong>&nbsp;Y. Wang; H.S. Djie; B.S. Ooi; P. Rotella; P. Dowd; V. Aimez; Y. Cao; Y.-H. Zhang, Interdiffusion effect on quantum-well structures grown on GaSb substrate, Thin Solid Films 515(10),4352-4355 (2007).<\/p>\n\n\n\n<p><strong>63<\/strong>&nbsp;C. Lange, M. Schwalm, S. Chatterjee, W. W. R\u00fchle, N. C. Gerhardt, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, The Variable Stripe-Length Method Revisited: Improved Analysis, Appl. Phys. Lett. 91, 191107, 1-3 (2007).<\/p>\n\n\n\n<p><strong>62<\/strong>&nbsp;S.-Q. Yu, D. Ding, J.-B. Wang, N. Samal, X. Jin, Y. Cao, S. R. Johnson, Y.-H. Zhang, High Performance GaAsSb\/GaAs Quantum Well Lasers, J. Vac. Sci. Technol. B 25, 1658-63 (2007).<\/p>\n\n\n\n<p><strong>61<\/strong>&nbsp;L. Borkovska, N. Korsunska, V. Kladko, T. Kryshtab, V. Kushirenko, M. Slobodyan, O. Yefanov, Ye. Venger, S. R. Johnson, Yu. G. Sadofyev, Y.-H. Zhang, Investigation of Defect Structure of InGaNAsSb\/GaAs Quantum Wells, Materials Science &amp; Engineering C 27, 1038-42 (2007).<\/p>\n\n\n\n<p><strong>60<\/strong>&nbsp;S.-Q. Yu, J.-B. Wang, D. Ding, S. R. Johnson, D. Vasileska, Y.-H. Zhang, Impact of electronic density of states on electroluminescence refrigeration, Solid-State Electronics 51, 1387\u20131390 (2007)<\/p>\n\n\n\n<p><strong>59<\/strong>&nbsp;J.-B. Wang, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy, (an invited paper for a feature article in a special issue), phys. stat. sol. (b) 244, 2740 \u2013 2751 (2007).<\/p>\n\n\n\n<p><strong>58<\/strong>&nbsp;S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Excitation Dependent Photoluminescence Measurements of Nonradiative Lifetime and Quantum Efficiency in Bulk GaAs\/AlGaAs, J. Vac. Sci. Technol. B, 25, 1077-1082 (2007).<\/p>\n\n\n\n<p><strong>57<\/strong>&nbsp;C. B\u00fcckers, G. Blume, A. Thr\u00e4nhardt, C. Schlichenmaier, P. J. Klar, G. Weiser, S. W. Koch, J. Hader, J. V. Moloney, T. J. C. Hosea, S. J. Sweeney, J.-B. Wang, S. R. Johnson, and Y.-H. Zhang, Microscopic electroabsorption lineshape analysis for Ga(AsSb)\/GaAs heterostructures, J. Appl. Phys. 101, 033118&nbsp;(2007).<\/p>\n\n\n\n<p><strong>56<\/strong>&nbsp;J.-B. Wang, and Y.-H. Zhang, Increased power conversion efficiency through photon recycling in quantum well lasers, phys. stat. sol. (c) 4, 1601\u2013 1604 (2007).<\/p>\n\n\n\n<p><strong>55<\/strong>&nbsp;D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, and Y.-H. Zhang, Intrinsic irreversibility in semiconductor light emission, phys. stat. sol. (c) 4, 1698\u2013 1701 (2007).<\/p>\n\n\n\n<p><strong>54<\/strong>&nbsp;V. I. Kadushkin, Yu. G. Sadof\u2019ev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang, Resonance Modulation of the Intersubband Electron\u2013Electron Interaction in an AlSb(\u03b4-Te)\/InAs\/AsSb(\u03b4-Te) Quantum Well by Magnetic Field, Semiconductors 41, 327 (2007) [ Fizika i Tekhnika Poluprovodnikov 41, 338 (2007)].<\/p>\n\n\n\n<p><strong>53<\/strong>&nbsp;K. Hild, S. J. Sweeney, I. P. Marko, S. R. Jin, S. R. Johnson, S. A. Chaparro, S. Yu, Y.-H. Zhang, Temperature and pressure dependence of carrier recombination processes in GaAsSb\/GaAs quantum well lasers, phys. stat. sol. (b) 244, 197 (2007).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2006<\/h3>\n\n\n\n<p><strong>52<\/strong>&nbsp;K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, S. R. Johnson, S. A. Chaparro, S.-Q. Yu, Y.-H. Zhang, Carrier recombination in 1.3 \u00b5m GaAsSb\/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).<\/p>\n\n\n\n<p><strong>51<\/strong>&nbsp;L. Borkovska, O. Yefanov, O. Gudymenko, S. R. Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu. G. Sadofyev, Y.-H. Zhang, Effect of Growth Temperature on the Luminescent and Structural Properties of InGaAsSbN\/GaAs Quantum Wells for 1.3 \u03bcm Telecom Applications, Thin Solid Films 515, 786 (2006).<\/p>\n\n\n\n<p><strong>50<\/strong>&nbsp;N. A. Kabir, Y. Yoon, J. R. Knab, J.-Y. Chen, A. G. Markelz, J. L. Reno, Yu. G. Sadofyev, S. R. Johnson, Y.-H. Zhang, J. P. Bird, Terahertz Transmission Characteristics of High-Mobility GaAs and InAs Two-Dimensional-Electron-Gas Systems, Appl. Phys. Lett. 89, 132109 (2006).<\/p>\n\n\n\n<p><strong>49<\/strong>&nbsp;K. Hild, S. Wright, D. Lock, S. Jin, I. Marko, S. Sweeney, S. R. Johnson, S. Chaparro, S.-Q. Yu, and Y.-H. Zhang, Carrier recombination in 1.3 \u00b5m GaAsSb\/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).<\/p>\n\n\n\n<p><strong>48<\/strong>&nbsp;J.-B.Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Influence of photon recycling on semiconductor luminescence refrigeration , J. Appl. Phys., 100, 043502 (2006) download<\/p>\n\n\n\n<p><strong>47<\/strong>&nbsp;S.-Q. Yu, X. Jin, S. R. Johnson, Y.-H. Zhang, Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb\/GaAs quantum well lasers, J. Vac. Sci. Technol. B 24, 1617 (2006) download<\/p>\n\n\n\n<p><strong>46<\/strong>&nbsp;L. Borkovska, O. Yefanov, O. Gudymenko, S. Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu. Sadofyev, Y.-H. Zhang, Effect of growth temperature on the luminescent and structural properties of InGaAsSbN\/GaAs quantum wells for 1.3 \u00b5m telecom application, Thin Solid Films 515, 786 \u2013 789 (2006).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2005<\/h3>\n\n\n\n<p><strong>45<\/strong>&nbsp;Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Large Negative Persistent Photoconductivity in InAs\/AlSb Quantum Wells, Appl. Phys. Lett. 86, 192109 (2005).<\/p>\n\n\n\n<p><strong>44<\/strong>&nbsp;N. Samal, S. R. Johnson, D. Ding, A. K. Samal, Y.-H. Zhang, Novel VCSEL Design with Tailored Spatial Current Injection for High-Power Single-Mode Operation, Appl. Phys. Lett. 87, 161108 (2005).<\/p>\n\n\n\n<p><strong>43<\/strong>&nbsp;G. Blume, T. J. C. Hosea, S. J. Sweeney, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, Spectroscopic Investigations of GaAsSb\/GaAs based structures for 1.3 \u00b5m VCSEL applications, IEE Proc. Optoelectron. 152, 110 (2005).<\/p>\n\n\n\n<p><strong>42<\/strong>&nbsp;Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Infrared Light Induced Beating of Shubnikov-de Haas Oscillations in MBE grown InAs\/AlSb Quantum Wells, J. Crystal Growth 278, 661 (2005).<\/p>\n\n\n\n<p><strong>41<\/strong>&nbsp;Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Unusual Persistent Photoconductivity in InAs\/AlSb Quantum Wells, Semiconductors 39, 95 (2005), [Fiz. Tekh. Poluprovodn. 39, 106 (2005)].<\/p>\n\n\n\n<p><strong>40<\/strong>&nbsp;V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Cyclotrone Resonance in Both Doped and Non-Doped InAs\/AlSb Quantum Well Heterostructures, Semiconductors 39, 61 (2005), [Fiz. Tekh. Poluprovodn. 39, 71 (2005)].<\/p>\n\n\n\n<p><strong>39<\/strong>&nbsp;V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Maremiyanin, S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, Y.-H. Zhang, Persistent Photoconductivity Spectra in InAs\/AlSb Quantum Well Heterostructures, Semiconductors 39, 22 (2005), [Fiz. Tekh. Poluprovodn. 39, 30 (2005)].<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2004<\/h3>\n\n\n\n<p><strong>38<\/strong>&nbsp;S. R. Johnson, Yu. G. Sadofyev, D. Ding, Y. Cao, S. A. Chaparro, K. Franzreb, and Y.-H. Zhang, Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy, J. Vac. Sci. &amp; Technol. 22, 1436 (2004).<\/p>\n\n\n\n<p><strong>37<\/strong>&nbsp;D. S. Jiang, L. F. Bian, X. G. Liang, K. Chang, B. Q. Sun, S. Johnson, Y.-H. Zhang, Structural and optical properties of GaAsSb\/GaAs heterostructure quantum wells, J. Crystal Growth 268, 336 (2004).<\/p>\n\n\n\n<p><strong>36<\/strong>&nbsp;Yu. G. Sadofyev, S. R. Johnson, S. A. Chaparro, Y. Cao, D. Ding, J.-B. Wang, K. Franzreb, and Y.-H. Zhang, \u201cSb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy\u201d, Appl. Phys. Lett. 84, 3546 (2004).<\/p>\n\n\n\n<p><strong>35<\/strong>&nbsp;J.-B. Wang, S. R. Johnson, S. A. Chaparro, D. Ding, Y. Cao, Yu. G. Sadofyev, Y.-H. Zhang, J.A. Gupta, and C.Z. Guo, Band edge alignment of pseudomorphic GaAs1-ySby on GaAs, Phys. Rev. B70, 195339 (2004).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2003 and earlier<\/h3>\n\n\n\n<p><strong>34<\/strong>&nbsp;J. Siegert, A. Gaarder, S. Marcinkevi ius, R. Leon, S. Chaparro, S. R. Johnson, Y. Sadofyev and Y. -H. Zhang, Photoexcited carrier dynamics in aligned InAs\/GaAs quantum dots grown on strain-relaxed InGaAs layers, Physica E: Low-dimensional Systems and Nanostructures 18, 541 (2003).<\/p>\n\n\n\n<p><strong>33<\/strong>&nbsp;J. Siegert, S. Marcinkevicius, A. Gaarder, R. Leon, S. Chaparro, S. R. Johnson, Y. Sadofyev, Y.-H. Zhang, Carrier recombination in aligned InAs\/GaAs quantum dots grown on strain-relaxed InGaAs layers, Physica Status Solidi (c ) 0, 1213 (2003).<\/p>\n\n\n\n<p><strong>32<\/strong>&nbsp;X.-H. Zheng, D.-J. Jiang, S. Johnson, Y.-H. Zhang, Structural and optical properties of strain-compensated GaAsSb\/GaAs quantum wells with high Sb composition, Appl. Phys. Lett. 83, 4149 (2003).<\/p>\n\n\n\n<p><strong>31<\/strong>&nbsp;P. Dowd, S. R. Johnson, S. A. Feld, M. Adamcyk, S. A. Chaparro, J. Joseph, K. Hilgers, M. P. Horning, K. Shiralagi, Y.-H. Zhang, Long wavelength GaAsP\/GaAs\/GaAsSb VCSELs on GaAs substrates for communications applications, Electron. Lett. 39, 987 (2003).<\/p>\n\n\n\n<p><strong>30<\/strong>&nbsp;S. R. Johnson, C.-Z. Guo, S. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, X. Jin, S.-Q. Yu, D. Ding, Y.-H. Zhang, GaAsSb\/GaAs Band Alignment Evaluation for Long-Wave Photonic Applications, J. Crystal Growth 251, 521 (2003).<\/p>\n\n\n\n<p><strong>29<\/strong>&nbsp;D. S. Jiang, J.-B. Wang, X.-G. Liang, Z.-B. Chen, S.-Q. Yu, Y. Cao, Y.-H. Zhang, Luminescence Properties of GaAsSb\/GaAs Quantum Well Laser Structures, J. Infrared and Millimeter Waves 21, pp. 7-10 (2002).<\/p>\n\n\n\n<p><strong>28<\/strong>&nbsp;R. G. Mani, W.B. Johnson, V. Narayanamurti, V. Privman, Y.-H. Zhang, Nuclear spin based memory and logic in quantum Hall semiconductor nanostructures for quantum computing applications, Physica E 12, 152 (2002).<\/p>\n\n\n\n<p><strong>27<\/strong>&nbsp;Yu. G. Sadofyev, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Large g-Factor Enhancement in High-Mobility InAs\/AlSb Quantum Wells, Appl. Phys. Lett. 81, 1833 (2002).<\/p>\n\n\n\n<p><strong>26<\/strong>&nbsp;R. Leon, J. Ibanez, S. Marcinkevicius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, S. R. Johnson, Y.-H. Zhang, Defect States in Red-Emitting InxAl1-xAs Quantum Dots, Phys. Rev. B66, 85331 (2002).<\/p>\n\n\n\n<p><strong>25<\/strong>&nbsp;R. Leon, S. Chaparro, S. R. Johnson, C. Navarro, X. Jin, Y.-H. Zhang, J. Siegert, S. Marcinkevicius, X. Z. Liao, J. Zou, Dislocation-Induced Spatial Ordering of InAs Quantum Dots: Effects on Optical Properties, J. Appl. Phys. 91, 5826 (2002).<\/p>\n\n\n\n<p><strong>24<\/strong>&nbsp;M. Canonico, C. Poweleit, J. Men\u00e9ndez, A. Debernardi, S. R. Johnson, Y.-H. Zhang, Anomalous LO Phonon Lifetime in AlAs, Phys. Rev. Lett. 88, 215502 (2002).<\/p>\n\n\n\n<p><strong>23<\/strong>&nbsp;S. R. Johnson, S. Chaparro, J. Wang, N. Samal, Y. Cao, Z. B. Chen, C. Navarro, J. Xu, S. Q. Yu, David J. Smith, C.-Z. Guo, P. Dowd, W. Braun, and Y.-H. Zhang, GaAs-substrate-based long-wave active materials with type-II band alignments, J. Vac. Sci. &amp; Technol. 19, 1501 (2001).<\/p>\n\n\n\n<p><strong>22<\/strong>&nbsp;C.-Z. Guo, S.-L. Chen, Y.-H. Zhang, The limit of operation wavelength on IR intersubband quantum cascade lasers, J. of Infrared &amp; Millimeter Waves 20, 1 (2001).<\/p>\n\n\n\n<p><strong>21<\/strong>&nbsp;J. Ib\u00e1\u00f1ez, R. Leon, D. T. Vu, S. Chaparro, S. R. Johnson, C. Navarro, and Y.-H. Zhang, Tunneling carrier escape from InAs self-assembled quantum dots, Appl. Phys. Lett. 79, 2013 (2001).<\/p>\n\n\n\n<p><strong>20<\/strong>&nbsp;R. Leon, G. M. Swift, B. Magness, W.A. Taylor, Y.S. Tang, K.L. Wang, P. Dowd, and Y.-H. Zhang, Changes in luminescence emission induced by proton irradiation: InGaAs\/GaAs quantum wells and quantum dots, Appl. Phys. Lett. 76, 2075 (2000).<\/p>\n\n\n\n<p><strong>19<\/strong>&nbsp;W. Braun, P. Dowd, C.-Z. Guo, S. L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsasser, D. J. Smith, Strained InGaAs\/GaPAsSb Heterostructures Grown on GaAs (001) for Optoelectronic Applications in the 1100 nm \u2013 1550 nm Range, J. Appl. Phys. 88, 3004 (2000).<\/p>\n\n\n\n<p><strong>18<\/strong>&nbsp;M. Beaudoin, E. Grassi, S.R. Johnson, K. Ramaswamy, K. Tsakalis, T.L. Alford, and Y.-H. Zhang, Real-Time Composition Control of InAlAs near lattice matched to InP Using Spectroscopic Ellipsometry, J. Vac. Sci. &amp; Technol. 18, 1435 (2000).<\/p>\n\n\n\n<p><strong>17<\/strong>&nbsp;S. R. Johnson, P. Dowd, W. Braun, U. Koelle, C. M. Ryu, M. Beaudoin, C. Z. Guo, Y.-H. Zhang, Long Wavelength Pseudomorphic InGaPAsSb Active Materials Grown on GaAs, J. Vac. Sci. &amp; Technol. 18, 1545 (2000).<\/p>\n\n\n\n<p><strong>16<\/strong>&nbsp;P. Dowd, W. Braun, David J. Smith, C.M. Ryu, C.-Z. Guo, S.L. Chen, U. Koelle, S.R. Johnson, and Y.-H. Zhang, Long Wavelength (1.3 \u00b5m and 1.5 \u00b5m) Photoluminescence from InGaAs\/GaPAsSb Quantum Wells Grown on GaAs, Appl. Phys. Lett. 75(9), 1267 (1999).<\/p>\n\n\n\n<p><strong>15<\/strong>&nbsp;W. Braun, H. M\u00f6ller and Y.-H. Zhang, Accurate Growth Rate Determined on Rotating Substrates Using Electron Diffraction Dynamics, Appl. Phys. Lett., 74(1) 140 (1999).<\/p>\n\n\n\n<p><strong>14<\/strong>&nbsp;W. Braun, H. M\u00f6ller, S.R. Johnson, and Y.-H. Zhang, Reflection high-energy electron diffraction oscillations on rotating substrates, J. Vac. Sci. &amp; Technol. 17, 474 (1999).<\/p>\n\n\n\n<p><strong>13<\/strong>&nbsp;S. R. Johnson, E. Grassi, M. Beaudoin, M. D. Boonzaayer, K. S. Tsakalis, and Y.-H. Zhang, Closed-Loop Control of Composition and Temperature During the Growth of Lattice-Matched InGaAs on InP, J. Vac. Sci. Technol. B 17, 1237 (1999).<\/p>\n\n\n\n<p><strong>12<\/strong>&nbsp;M. Beaudoin, S.R. Johnson, M.D. Boonzaayer, Y.-H. Zhang, and B. Joe, Use of Spectroscopic Ellipsometry for Feedback Control during the Growth of Thin AlAs and InAs layers, J. Vac. Sci. &amp; Technol., B 17, 1233-6. (1999).<\/p>\n\n\n\n<p><strong>11<\/strong>&nbsp;W. Braun, H. M\u00f6ller, and Y.-H. Zhang, Azimuthal Scans: a New RHEED Measurement Mode During Growth on Rotating Substrates, J. Crystal Growth, 201\/202, 50 (1999).<\/p>\n\n\n\n<p><strong>10<\/strong>&nbsp;M. Beaudoin, P. Kelkar, S. R. Johnson, C.-H. Kuo, M. Boonzaayer, and Y.-H. Zhang, Growth of Resonant Cavity Enhanced Photo-Detectors (RCEPD) by MBE with Feedback Control Using Spectroscopic Ellipsometry, J. Crystal Growth, 201\/202, 990 (1999).<\/p>\n\n\n\n<p><strong>9<\/strong>&nbsp;S.R. Johnson, G. Grassi, M. Beaudoin, M. Boonzaayer, K.S. Tsakalis, Y.-H. Zhang, Feedback Control of Substrate Temperature During the Growth of Near-Lattice-Matched InGaAs and InAlAs on InP Using Diffuse Reflection Spectroscopy, J. Crystal Growth, 201\/202, 44 (1999).<\/p>\n\n\n\n<p><strong>8<\/strong>&nbsp;C.-H. Kuo, M. DeHerrera, T. Kyong, M. Boonzaayer, Y.-H. Zhang, B. Johs, and J.S. Hale, Real Time In-Situ Control of InGaAs Lattice Matched to InP by 88 Wavelength Ellipsometer, J. Vac. Sci. &amp; Technol., B 16, 1484 (1998).<\/p>\n\n\n\n<p><strong>7<\/strong>&nbsp;S.R. Johnson, C.-H. Kuo, M. Boonzaayer, W. Braun, U. Koelle, and Y.-H. Zhang, In-situ Temperature Control during MBE Growth Using band Edge Thermometry, J. Vac. Sci. &amp; Technol., B 16, 1502 (1998).<\/p>\n\n\n\n<p><strong>6<\/strong>&nbsp;W. Braun, H. M\u00f6ller, and Y.-H. Zhang, Reflection High-Energy Electron Diffraction during Substrate Rotation: a New Dimension for in-situ Characterization, J. Vac. Sci. &amp; Technol., B 16, 1507 (1998).<\/p>\n\n\n\n<p><strong>5<\/strong>&nbsp;C.B. Wheeler and Y.-H. Zhang, III-V Oxides, and their Uses in Optoelectronic Integration, Compound Semicond. 3, 40 (1997).<\/p>\n\n\n\n<p><strong>4<\/strong>&nbsp;Y.-H. Zhang, A. Y. Lew, E. T. Yu, and Y. Chen, Microstructure Properties of InAs\/InAsxSb1-x Superlattices Grown by Molecular Beam Epitaxy, J. of Crystal Growth 175, 833 (1997).<\/p>\n\n\n\n<p><strong>3<\/strong>&nbsp;K. Meimberg, M. Potemski, P. Hawrylak, Y.-H. Zhang, and K. Ploog, Optical Detected Oscillations of Screening by a Two-Dimensional Electron Gas in a Magnetic Field, Phys. Rev. B55, 7685 (1997).<\/p>\n\n\n\n<p><strong>2<\/strong>&nbsp;H.Q. Le, G.W. Turner, J.R. Ochoa, M.J. Manfra, C.C. Cook, and Y.-H. Zhang, Broad Wavelength Tunability of Grating-Coupled External Cavity Midinfrared Semiconductor Lasers, Appl. Phys. Lett. 69, 2804 (1996).<\/p>\n\n\n\n<p><strong>1<\/strong>&nbsp;A.Y. Lew, E.T. Yu, and Y.-H. Zhang, Atomic-Scale Structure of InAs\/InAsxSb1-x Superlattices Grown and InAsxSb1-x Ordered Alloys Grown by Modulated Molecular Beam Epitaxy, J. of Vac. Sci. &amp; Technol. B14, 2940 (1996).<\/p>\n\n<\/div><\/div><\/div>\n<\/div><\/div>\n\n\n<p><strong>See our&nbsp;<a href=\"http:\/\/repository.asu.edu\/collections\/221\">digital archive<\/a>&nbsp;for access to papers published in select journals.<\/strong><\/p>\n","protected":false},"excerpt":{"rendered":"<p class=\"mb-2\">See our&nbsp;digital archive&nbsp;for access to papers published in select journals.<\/p>\n","protected":false},"author":338,"featured_media":0,"parent":0,"menu_order":13,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-10364","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/pages\/10364","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/users\/338"}],"replies":[{"embeddable":true,"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/comments?post=10364"}],"version-history":[{"count":0,"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/pages\/10364\/revisions"}],"wp:attachment":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/media?parent=10364"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}