{"id":10345,"date":"2024-05-21T09:05:54","date_gmt":"2024-05-21T16:05:54","guid":{"rendered":"https:\/\/labs.engineering.asu.edu\/mbe-group\/?page_id=10345"},"modified":"2024-06-25T15:53:00","modified_gmt":"2024-06-25T22:53:00","slug":"research","status":"publish","type":"page","link":"https:\/\/labs.engineering.asu.edu\/mbe-group\/research\/","title":{"rendered":"Research"},"content":{"rendered":"<div class=\"uds-hero-sm alignfull has-btn-row \" style=\"margin-bottom:var(--wp--preset--spacing--uds-size-8);\"><div class=\"hero-overlay\"><\/div><img loading=\"lazy\" decoding=\"async\" width=\"2000\" height=\"1125\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573.jpg\" class=\"hero\" alt=\"\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573.jpg 2000w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-300x169.jpg 300w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-1024x576.jpg 1024w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-768x432.jpg 768w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2017\/05\/shutterstock_71713573-1536x864.jpg 1536w\" sizes=\"auto, (max-width: 2000px) 100vw, 2000px\" \/><div class=\"acf-innerblocks-container\">\n\n<h1 class=\"wp-block-heading has-white-color has-text-color has-link-color wp-elements-3437776880513a1cdc1541487d489cc1\">Research<\/h1>\n\n\n\n<div class=\"wp-block-group content is-layout-flow wp-block-group-is-layout-flow\"><\/div>\n\n\n\n<div class=\"wp-block-buttons btn-row is-layout-flex wp-block-buttons-is-layout-flex\"><\/div>\n\n<\/div><\/div>\n\n\n<div class=\"wp-block-query is-layout-flow wp-block-query-is-layout-flow\"><ul class=\"columns-3 wp-block-post-template is-layout-grid wp-container-core-post-template-is-layout-688485ae wp-block-post-template-is-layout-grid\"><li class=\"wp-block-post post-10606 post type-post status-publish format-standard has-post-thumbnail hentry category-research\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"571\" height=\"227\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2024\/11\/Close-loop-control-4-e1731284703562.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2024\/11\/Close-loop-control-4-e1731284703562.png 571w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2024\/11\/Close-loop-control-4-e1731284703562-500x199.png 500w\" sizes=\"auto, (max-width: 571px) 100vw, 571px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">AI and MBE Automation<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">We demonstrated a closed-loop real-time-control of MBE growth using feed-back from an in-situ spectroscopic ellipsometer (SE) and a large material data base, which enabled precise control of layer thickness and alloy composition within one run without the need of ex situ characterization. The dynamic optical constant (OC) database developed for composition control of InGaAs and InAlAs alloys within a large&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2024\/11\/ai-and-mbe-automation\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9625 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-solar-cell\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"975\" height=\"363\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc8.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc8.png 975w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc8-300x112.png 300w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc8-768x286.png 768w\" sizes=\"auto, (max-width: 975px) 100vw, 975px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">II-VI Semiconductor Solar Cells<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">J.-J. Li, L. et al., Applied Physics Letters 101, 061915-061915. (2012) CdSe\/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. A carrier lifetime of 188 ns is observed in time-resolved PL measurements. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration.&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/11\/ii-vi-semiconductor-solar-cells\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Solar cell<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9622 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-solar-cell\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"338\" height=\"283\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc6.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc6.png 338w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc6-300x251.png 300w\" sizes=\"auto, (max-width: 338px) 100vw, 338px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">Multijunction solar cell testing<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">S. H. Lim, et al., Progress in Photovoltaics: Research and Applications, (2011). The effects of luminescence coupling on the external quantum efficiency (EQE) measurement of an InGaP\/InGaAs\/Ge triple junction solar cell were investigated. A small signal model was used to study the interaction of the subcells during EQE measurement. It was found that an optical\u2013electrical feedback mechanism results in EQE&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/11\/multijunction-solar-cell-testing\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Solar cell<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9619 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-solar-cell\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"656\" height=\"333\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc1.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc1.png 656w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_sc1-300x152.png 300w\" sizes=\"auto, (max-width: 656px) 100vw, 656px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">GaAs high efficiency ultrathin film solar cells<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">W. Yang, et al., J. Appl. Phys. 115, 203105 (2014). This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. The structure of the demonstrated solar cells consists of an In0.49Ga0.51P\/GaAs\/In0.49Ga0.51P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/11\/gaas-high-efficiency-ultrathin-film-solar-cells\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Solar cell<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9616 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-solar-cell\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"495\" height=\"386\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/solarcell.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"solar cell\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/solarcell.png 495w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/solarcell-300x234.png 300w\" sizes=\"auto, (max-width: 495px) 100vw, 495px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">Theory<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">D. Ding, et al., J. Appl. Phys. 110, 123104 (2011). A semi-analytical model is constructed for single- and multi-junction solar cells. Four typical planar structures with the combinations of a smooth\/textured top surface and an absorbing\/reflecting substrate (or backside surface) are investigated. The below-bandgap tail absorption increases the short-circuit current but decreases the output and open-circuit voltage. Two important design&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/11\/theory\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Solar cell<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9628 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-photodetector\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"414\" height=\"313\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_pd1.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_pd1.png 414w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_pd1-300x227.png 300w\" sizes=\"auto, (max-width: 414px) 100vw, 414px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">Type-II Superlattice Semiconductors for Infrared Photodetectors<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">Type-II Superlattice Semiconductors for Infrared Photodetectors E. H. Steenbergen, et al., Appl. Phys. Lett. 99, 251110 (2011). Time-resolved photoluminescence measurements reveal a minority carrier lifetime of &gt;412\u2009ns at 77\u2009K under low excitation for a long-wavelength infrared InAs\/InAs0.72Sb0.28 type-II superlattice (T2SL). The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/08\/type-ii-superlattice-semiconductors-for-infrared-photodetectors\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Photodetector<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9612 post type-post status-publish format-standard has-post-thumbnail hentry category-mbe-gc category-research\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"310\" height=\"262\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_opto.jpg\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_opto.jpg 310w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_opto-300x254.jpg 300w\" sizes=\"auto, (max-width: 310px) 100vw, 310px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">Heterovalent Semiconductor Structure: MBE growth and characterization<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">MBE growth of various kinds of III-V and II-VI compound semiconductors.\u00a0 A unique twin-chamber MBE system allows growth of any composition of III-V and II-VI alloys. Monolithic intergration material platform for various optoelectronic and electronic device applications. he II-VI chamber is capable of growing almost all possible combinations of materials including Zn, Se, Te, Mg, Be, and Cd. The Se&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/08\/heterovalent-semiconductor-structure-mbe-growth-and-characterization\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Heterovalent semiconductor structures: MBE growth and characterization<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9634 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-leds\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"389\" height=\"641\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_led.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_led.png 389w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_led-182x300.png 182w\" sizes=\"auto, (max-width: 389px) 100vw, 389px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">LEDs and Electroluminescence Refrigeration<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">Photon extraction factor vs spontaneous emission efficiency for the maximum photon recycling case in a and for the minimum photon recycling case in b. The cooling efficiency is positive in the shaded area and zero along the solid line. The ideal cooling coefficient ic=kT\/Eg used is for the GaAs band gap energy. 04 \u00a0 J.-B. Wang, et al., J. Appl.&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/01\/leds-and-electroluminescence-refrigeration\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">LEDs and electroluminescence refrigeration<\/a><\/div>\n<\/div>\n<\/li><li class=\"wp-block-post post-9631 post type-post status-publish format-standard has-post-thumbnail hentry category-research category-photodetector\">\n<div class=\"wp-card-v2 card card-vertical card-story\" style=\"\">\n<figure style=\"aspect-ratio:3\/2\" class=\"wp-block-post-featured-image card-img-top\"><img loading=\"lazy\" decoding=\"async\" width=\"569\" height=\"403\" src=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_pd10.png\" class=\"attachment-post-thumbnail size-post-thumbnail wp-post-image\" alt=\"\" style=\"width:100%;height:100%;object-fit:cover;\" srcset=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_pd10.png 569w, https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-content\/uploads\/sites\/194\/2018\/01\/research_pd10-300x212.png 300w\" sizes=\"auto, (max-width: 569px) 100vw, 569px\" \/><\/figure>\n\n<div class=\"card-header\">\n<h3 class=\"wp-block-post-title card-title\">Two Color Detectors<\/h3>\n<\/div>\n\n\n<div class=\"wp-block-group is-layout-flow wp-block-group-is-layout-flow card-body\"><div class=\"wp-block-post-excerpt\"><p class=\"wp-block-post-excerpt__excerpt\">E. H. Steenbergen, et al. Appl. Phys. Lett. 97 161111-161114 (2010). A two-terminal multicolor photodetector that is most advantageous for greater than two bands is proposed. Individual color detection is realized with appropriate optical biasing. This concept is demonstrated experimentally using a three-color photodetector and biasing light emitting diodes. The measured linear dynamic range is greater than four orders of&hellip;<\/p><p class=\"wp-block-post-excerpt__more-text\"><a class=\"wp-block-post-excerpt__more-link\" href=\"https:\/\/labs.engineering.asu.edu\/mbe-group\/2018\/01\/two-color-detectors\/\">Read more<\/a><\/p><\/div><\/div>\n\n\n<div class=\"taxonomy-category wp-block-post-terms card-tags\"><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Research<\/a><span class=\"wp-block-post-terms__separator card-tags\"> <\/span><a class=\"btn btn-tag btn-tag-alt-white\"  rel=\"tag\">Photodetector<\/a><\/div>\n<\/div>\n<\/li><\/ul>\n\n<\/div>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":338,"featured_media":0,"parent":0,"menu_order":17,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-10345","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/pages\/10345","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/users\/338"}],"replies":[{"embeddable":true,"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/comments?post=10345"}],"version-history":[{"count":0,"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/pages\/10345\/revisions"}],"wp:attachment":[{"href":"https:\/\/labs.engineering.asu.edu\/mbe-group\/wp-json\/wp\/v2\/media?parent=10345"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}