J.-J. Li, L. et al., Applied Physics Letters 101, 061915-061915. (2012) CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. A carrier lifetime of 188 ns is observed in time-resolved PL measurements. The steady-state PL peak position exhibits a blue shift…

S. H. Lim, et al., Progress in Photovoltaics: Research and Applications, (2011). The effects of luminescence coupling on the external quantum efficiency (EQE) measurement of an InGaP/InGaAs/Ge triple junction solar cell were investigated. A small signal model was used to study the interaction of the subcells during EQE measurement. It was found that an optical–electrical…

W. Yang, et al., J. Appl. Phys. 115, 203105 (2014). This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. The structure of the demonstrated solar cells consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure PN junction with an…

D. Ding, et al., J. Appl. Phys. 110, 123104 (2011). A semi-analytical model is constructed for single- and multi-junction solar cells. Four typical planar structures with the combinations of a smooth/textured top surface and an absorbing/reflecting substrate (or backside surface) are investigated. The below-bandgap tail absorption increases the short-circuit current but decreases the output and…