Type-II Superlattice Semiconductors for Infrared Photodetectors E. H. Steenbergen, et al., Appl. Phys. Lett. 99, 251110 (2011). Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the…

E. H. Steenbergen, et al. Appl. Phys. Lett. 97 161111-161114 (2010). A two-terminal multicolor photodetector that is most advantageous for greater than two bands is proposed. Individual color detection is realized with appropriate optical biasing. This concept is demonstrated experimentally using a three-color photodetector and biasing light emitting diodes. The measured linear dynamic range is…