Photodetector
Type-II Superlattice Semiconductors for Infrared Photodetectors
Type-II Superlattice Semiconductors for Infrared Photodetectors
E. H. Steenbergen, et al., Appl. Phys. Lett. 99, 251110 (2011).
Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the…
Two Color Detectors
E. H. Steenbergen, et al. Appl. Phys. Lett. 97 161111-161114 (2010).
A two-terminal multicolor photodetector that is most advantageous for greater than two bands is proposed. Individual color detection is realized with appropriate optical biasing. This concept is demonstrated experimentally using a three-color photodetector and biasing light emitting diodes. The measured linear dynamic range is greater than four orders of magnitude.
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