Heterovalent semiconductor structures: MBE growth and characterization
Heterovalent Semiconductor Structure: MBE growth and characterization
MBE growth of various kinds of III-V and II-VI compound semiconductors. A unique twin-chamber MBE system allows growth of any composition of III-V and II-VI alloys. Monolithic intergration material platform for various optoelectronic and electronic device applications. he II-VI chamber is capable of growing almost all possible combinations of materials including Zn, Se, Te, Mg,…