Growth
MBE chambers
The MBE laboratory is equipped with four solid source MBE chambers for growing III-V and II-VI semiconductor materials. All chambers are equipped for reflection high energy electron diffraction (RHEED) characterization and are fully computer controlled.
VG V80H (Chamber A and B)
The group’s oldest system is a VGV80H twin-chamber MBE system. Chamber A is dedicated to the growth of II-VI compound semiconductors such as ZnTe, CdTe, and CdSe. Chamber B is dedicated to the growth…