Group Attends the 39th North American Molecular Beam Epitaxy (NAMBE) Conference

Members of the ASU MBE Optoelectronics Group actively participated in the 39th North American Conference on Molecular Beam Epitaxy (NAMBE 2025), sharing their latest research results with the MBE community.

Prof. Yong-Hang Zhang gave the Art Gossard MBE Innovator Awardee Talk, “6.1 Å to 6.5 Å Families: from Type-II Superlattice IR Lasers and Detectors to Remote-Junction Solar Cells,” highlighting his influential contributions to MBE research.

Dr. Zheng Ju presented “Interface Fermi-Level Engineering for Selective Hole Extraction without p-Type Doping in CdTe Solar Cells,” showcasing progress toward achieving high open-circuit voltage in CdTe devices.

Allison McMinn presented the extraordinary talk titled: “SiGe/SnGe Superlattices Grown Using Molecular Beam Epitaxy”, which is the first demonstration of this material growth using MBE.

Xiaoyang Liu delivered a talk on “Interface Fermi-Level Position Engineering for p-Type Doping in Semiconductor Heterostructures,” offering a new approach to solve doping challenges in some material systems.

We also extend our warm congratulations to Prof. Zhang, who received the 2025 Art Gossard MBE Innovator Award at NAMBE 2025.

The 39th North American Conference on Molecular Beam Epitaxy (NAMBE 2025) is a prominent international forum for reporting scientific and technological developments in Molecular Beam Epitaxy research. It took place August 25-27, 2025, at the Hyatt Regency Tamaya Resort, Santa Ana Pueblo (Albuquerque, New Mexico).